BZT52C15

BZT52C15

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    BZT52C15 - SURFACE MOUNT ZENER DIODE - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C15 数据手册
BZT52C2V4 - BZT52C43 SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes A C D B E G Dim A B C D E SOD-123 Min 3.6 2.5 1.4 0.5 — 0.4 0.95 — Max 3.9 2.8 1.8 0.7 0.2 — 1.35 0.12 Mechanical Data Case: SOD-123, Plastic UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: See Below Weight: 0.01 grams (approx.) H J G H J All Dimensions in mm Cathode ELECTRICAL SYMBOL Anode Maximum Ratings Type Number Forward Voltage @TA=25°C unless otherwise specified @ IF = 10mA Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VF Pd R JA Value 0.9 500 305 -55 to + 150 Units V mW O C /W O TJ, TSTG C Notes: 1. Device Mounted on Ceramic PCB, 7.6mm x 9.4mm x 0.87mm with Pad Areas 25mm2. 2. Tested with Pulses. Period = 5ms, Pulse Width = 300us 3. When Provided, Otherwise, Parts are Provided with Date Code only, and Type Number Identifications Appears on reel only. 4. f = 1KHz. BZT52C2V4 - BZT52C43 SURFACE MOUNT ZENER DIODE Electrical Characteristics ZENER VOLTAGE VZ (1) VOLTS Min. 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 Nom 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 Max. 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 @TA=25°C unless otherwise specified Type Maximum Zener Impedance (2) ZZT(OHMS) IZT(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 5 Max. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 100 Maximum Zener Impedance (2) ZZK (OHMS) IZK(mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 Max. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 700 REVERSE CURRENT IR (Max) @ VR uA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.1 25.2 27.3 32.0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C30 BZT52C33 BZT52C36 BZT52C39 BZT52C43 Typical Temperature Coefficent @ IZTC mV/ -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 0.2 -2.7 1.2 -2.0 2.5 0.4 3.7 1.2 4.5 2.5 5.3 3.2 6.2 3.8 7.0 4.5 8.0 5.4 9.0 6.0 10.0 7.0 11.0 9.2 13.0 10.4 14.0 12.4 16.0 14.4 18.0 16.4 20.0 18.4 22.0 21.4 25.3 24.4 29.4 27.4 33.4 30.4 37.4 33.4 41.2 10.0 12.0 Marking WX W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WQ WR WS WT WU (1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25 mm2 (2) f=1KHz KD 0.6 BZT52C2V4 - BZT52C43 RATINGS AND CHARACTERISTIC CURVES 50 Tj = 25°C C2V7 C3V9 C5V6 C6V8 C6V2 C8V2 0.5 0.4 IZ, ZENER CURRENT (mA) 40 C3V3 C4V7 PD, POWER DISSIPATION (W) 30 0.3 20 0.2 0.1 10 Test Current IZ 5.0mA 0 0 0 25 50 75 100 125 150 0 1 TA, AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs Ambient Temperature 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics C39 C47 C43 C51 2 10 30 Tj = 25°C C10 C12 10 Tj = 25°C IZ, ZENER CURRENT (mA) 20 C15 IZ, ZENER CURRENT (mA) 8 6 C18 Test current IZ 2mA C27 C33 C36 10 C22 Test current IZ 5mA 4 Test Current IZ 2mA 2 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 1000 40 0 10 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 20 Tj = 25 °C Cj, JUNCTION CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Junction Capacitance vs Nominal Zener Voltage
BZT52C15
### 物料型号 - 型号:BZT52C2V4至BZT52C43,这些型号代表了不同的齐纳电压等级。

### 器件简介 - 特点: - 平面芯片结构 - 在陶瓷PCB上可承受500mW的功率耗散 - 通用型、中等电流 - 非常适合自动化装配流程

### 引脚分配 - 封装:SOD-123,塑料封装 - 极性:带有阴极带的阳极 - 尺寸:按照MIL-STD-202方法208可焊性

### 参数特性 - 最大额定值: - 齐纳电压(VZ):不同型号有不同的标称电压值 - 最大齐纳阻抗(Zz):不同型号有不同的阻抗值 - 反向电流(IR):不同型号有不同的最大反向电流值 - 典型温度系数:大多数型号为-3.5mV/°C

### 功能详解 - 应用:这些齐纳二极管主要用于过电压保护,其具体的电压等级覆盖从2.4V到43V。

### 应用信息 - 应用:适用于需要过电压保护的电路,如电源、信号线路等。

### 封装信息 - 封装类型:SOD-123 - 尺寸:具体尺寸参数在PDF中有详细描述,包括A到J的不同尺寸参数。
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