BZX30

BZX85C3V3 THRU BZX85C56 1.3W EPITAXIAL ZENER DIODE FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification • In compliance with EU RoHS 2002/95/EC directives DO-41(GLASS) Φ 0.8± 0.1 MECHANICAL DATA • Case: Molded Glass DO-41G • Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 guaranteed • Polarity: Color band denotes positive end • Mounting position:Any • Weight: 0.012 ounce, 0.336 gram Φ 2.5 ± 0.2 All Dimensions in mm ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃) Symbols Zener current see table "Characteristics" Power dissipation at TA=50℃ Junction temperature Storage temperature range Value Units Ptot TJ TSTG 1.3 1) 175 -65 to +200 25.4 ± 1 4.5 ± 0.2 25.4 ± 1 W ℃ ℃ 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25℃) Symbols Thermal resistance junction to ambient Forward voltage at IF=200mA Min Typ Max 170 1.2 1) Units RthA VF ℃/W V 1) Valid provided that a distance at 8mm from case are kept at ambient temperature BZX85C3V3 THRU BZX85C56 1.3W EPITAXIAL ZENER DIODE Type BZX85C 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 for VZT and V 2.5~2.9 2.8~3.2 3.1~3.5 3.4~3.8 3.7~4.1 4.0~4.6 4.4~5.0 4.8~5.4 5.2~6.0 5.8~6.6 6.4~7.2 7.0~7.9 7.7~8.7 8.5~9.6 9.4~10.6 10.4~11.6 11.4~12.7 12.4~14.1 13.8~15.6 15.3~17.1 16.8~19.1 18.8~21.2 20.8~23.3 22.8~25.6 25.1~28.9 28~32 31~35 34~38 37~41 40~46 44~50 48~54 52~60 1) r zjT Ω