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ES1C

ES1C

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    ES1C - SURFACE MOUNT SUPER FAST RECTIFIER - Diotech Company.

  • 数据手册
  • 价格&库存
ES1C 数据手册
Reverse Voltage - 50 to 600 Volts SURFACE MOUNT SUPER FAST RECTIFIER ES1A THRU ES1J Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● For surface mounted applications ● ● ● SMA(DO-214AC) Low reverse leakage ● Built-in strain relief,ideal for automated placement ● High forward surge current capability ● High temperature soldering guaranteed: 250℃/10 seconds at terminals Super fast switching for high efficiency .062(1.60) .055(1.40) .114(2.90) .098(2.50) .181(4.60) .157(4.00) .012(.305) .006(.152) MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated , solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight : 0.064 grams (approx.) .103(2.62) .079(2.00) .060(1.52) .030(0.76) .008(.203) .002(.051) .208(5.28) .188(4.80) D imensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 1.0A Symbol VRRM VRWM VR VR(RMS) IO ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit V V A 50 35 100 70 150 105 200 140 1.0 300 210 400 280 600 420 IFSM VFM IRM trr Cj Tj, TSTG 0.95 30 1.3 5.0 500 35 10 -55 to +150 1.7 A V µA nS pF °C Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. ES1A THRU ES1J RATINGS AND CHARACTERISTIC CURVES I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive or Inductive load IF, INSTANTANEOUS FORWARD CURRENT (A) 1.00 10 Tj = 25°C Pulse width = 300µs 0.75 1.0 - ES1D - ES1G 0.50 0.25 0.1 ES1J 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 0 25 50 75 100 125 150 175 TL , TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 30 Pulse width 8.3 ms single half-sine-wave (JEDEC method) 100 Tj = 25°C f = 1.0MHz 20 Cj, CAPACITANCE (pF) 10 10 0 1 10 NUMBER OF CYCLES AT 60Hz 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 100 50Ω NI (Non-inductive) Device Under Test 50V DC Approx 10Ω NI +0.5A (-) Pulse Generator (Note 2) (+) (-) 0A -0.25A 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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