GBJ15005 THRU GBJ1510
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIER
Forward Current - 15.0 Ampere
FEATURES
Glass passivated chip junction Reliable low cost construction utilizing molded plastic technique ● Ideal for printed circuit board ● Low reverse leakage current ● Low forward voltage drop ● High surge current capabiliy
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GBJ
MECHANICAL DATA
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C ase:Molded plastic, GBJ Terminals : Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed E poxy: UL 94V-0 rate flame retardant M ounting Position: Any
Dimensions in inches and (millimeters)
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at 7.5 A DC and 25 OC Maximum Reverse Current at TA = 25 C at Rated DC Blocking Voltage TA = 125 OC
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Symbols VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJC TJ,TS
GBJ 15005 50 35 50
GBJ 1501 100 70 100
GBJ 1502 200 140 200
GBJ 1504 400 280 400 15 200 1.1 10 500 60 0.8
GBJ 1506 600 420 600
GBJ 1508 800 560 800
GBJ Units 1510 1000 700 1000 V V V A A V µA pF
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Typical Junction Capacitance Typical Thermal Resistance 2)
1)
C/W
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Operating and Storage Temperature Range
1) 2)
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 VDC. Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink.
GBJ15005 THRU GBJ1510
RATINGS AND CHARACTERISTIC CURVES
IF, INSTANTANEOUS FORWARD CURRENT (A)
15 With heatsink Resistive or inductive load 100
Tj = 25°C Pulse width: 300µs
IO, AVERAGE RECTIFIED CURRENT (A)
10
10
1.0
5.0 Without heatsink 0 0 120 80 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve
Single Half-Sine Wave (JEDEC Method)
0.1
40
160
0.01
0
0.4 1.2 1.6 2.0 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
IFSM, PEAK FWD. SURGE CURRENT (A)
25 0
100
200
Cj, JUNCTION CAPACITANCE (pF)
10
100
0 1
Tj = 25°C
10
100
1.0
f = 1 MHz
Tj = 25°C
1.0
NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current
10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
100
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1000
100
Tj = 125°C Tj = 100°C
10
1.0
Tj = 50°C
Tj = 25°C
0.1 0 20 40 60 80 100 120 PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics
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