GBJ801

GBJ8005 THRU GBJ810 Reverse Voltage - 50 to 1000 Volts GLASS PASSIVATED BRIDGE RECTIFIER Forward Current - 8.0 Ampere FEATURES Glass passivated chip junction Reliable low cost construction utilizing molded plastic technique ● Ideal for printed circuit board ● Low reverse leakage current ● Low forward voltage drop ● High surge current capabiliy ● ● GBJ MECHANICAL DATA ● ● C ase:Molded plastic, GBJ Terminals : Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed E poxy: UL 94V-0 rate flame retardant M ounting Position: Any Dimensions in inches and (millimeters) ● ● MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at 4.0 A DC and 25 OC Maximum Reverse Current at TA = 25 C at Rated DC Blocking Voltage TA = 125 OC O Symbols VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJC TJ,TS GBJ 8005 50 35 50 GBJ 801 100 70 100 GBJ 802 200 140 200 GBJ 804 400 280 400 10 170 1.1 5.0 500 55 1.6 GBJ 806 600 420 600 GBJ 808 800 560 800 GBJ 810 1000 700 1000 Units V V V A A V µA pF O Typical Junction Capacitance Typical Thermal Resistance 1) 2) 2) 1) C/W O Operating and Storage Temperature Range -55 to +150 C Measured at 1 MHz and applied reverse voltage of 4 VDC. Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink. GBJ8005 THRU GBJ810 RATINGS AND CHARACTERISTIC CURVES IF, INSTANTANEOUS FORWARD CURRENT (A) 10 10 IO, AVERAGE RECTIFIED CURRENT (A) 8 With heatsink 1.0 6 4 Without heatsink 0.1 2 Resistive or Inductive load Tj = 25° C Pulse width = 300µs 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 1.6 1.8 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 180 IFSM, PEAK FWD SURGE CURRENT (A) Tj = 150° C 120 Cj, JUNCTION CAPACITANCE (pF) 160 Single half-sine-wave (JEDEC method) 100 Tj = 25° C f = 1MHz 10 80 40 0 1 1 10 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 100 Tj = 125° C Tj = 100° C 10 1.0 Tj = 50° C Tj = 25° C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics