GDZJ8.2

GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification • In compliance with EU RoHS 2002/95/EC directives DO-35 Φ 0.5 ± 0.1 • Case: Molded Glass DO-35 • Terminals: Axial leads, solderable per MIL-STD-202G, Method 208 • Polarity: S ee Diagram Below • Mounting position:Any • Weight: 0.13 gram Φ 1.8 ± MECHANICAL DATA All Dimensions in mm ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃) Symbols Zener current see table "Characteristics" Power dissipation at TA=25℃ Junction temperature Storage temperature range Value Units Ptot TJ TSTG 500 175 -65 to +175 26 ± 1 3.8 ± 0.2 0.2 26 ± 1 mW ℃ ℃ 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25℃) Symbols Thermal resistance junction to ambient Forward voltage at IF=100mA Min Typ Max 0.3 1.0 Units RthA VF K / mW V 1) Valid provided that a distance at 8mm from case are kept at ambient temperature GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE Part Number GDZJ 2.0 GDZJ 2.2 GDZJ 2.4 GDZJ 2.7 GDZJ 3.0 GDZJ 3.3 GDZJ 3.6 GDZJ 3.9 C LA S S A B A B A B A B A B A B A B A B A B C A V Z @ IZ T M i n. V 1.88 2.02 2.12 2.22 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.455 3.60 3.74 3.89 4.04 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.70 9.94 10.18 10.50 10.82 M a x. V 2.10 2.20 2.30 2.41 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.695 3.845 4.01 4.16 4.29 4.43 4.57 4.68 4.80 4.93 5.07 5.20 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.30 9.59 9.90 10.20 10.44 10.71 11.05 11.38 IZ (mA ) 5 5 5 5 5 5 5 5 VR (V ) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 IR ( u A ) MA X 120 100 120 100 50 20 10 5 Iz t (mA ) 5 5 5 5 5 5 5 5 Z ZT( Ω ) MA X 100 100 100 110 120 120 100 100 Iz k (mA ) 0.5 0.5 0.5 0.5 0.5 0.5 1 1 Z ZK ( Ω ) MA X 1000 1000 1000 1000 1000 1000 1000 1000 M A RK ING C OD E Z2A0 Z2B0 Z2A2 Z2B2 Z2A4 Z2B4 Z2A7 Z2B7 Z3A0 Z3B0 Z3A3 Z3B3 Z3A6 Z3B6 Z3A9 Z3B9 Z4A3 Z4B3 Z4C3 Z4A7 GDZJ 4.3 5 1.0 5 5 100 1 1000 GDZJ 4.7 B C A 5 1.0 5 5 90 1 900 Z4B7 Z4C7 Z5A1 GDZJ 5.1 B C A 5 1.5 5 5 80 1 800 Z5B1 Z5C1 Z5A6 GDZJ 5.6 B C A 5 2.5 5 5 60 1 500 Z5B6 Z5C6 Z6A2 GDZJ 6.2 B C A 5 3.0 5 5 60 1 300 Z6B2 Z6C2 Z6A8 GDZJ 6.8 B C A 5 3.5 2 5 20 0.5 150 Z6B8 Z6C8 Z7A5 GDZJ 7.5 B C A 5 4.0 0.5 5 20 0.5 120 Z7B5 Z7C5 Z8A2 GDZJ 8.2 B C A 5 5.0 0.5 5 20 0.5 120 Z8B2 Z8C2 Z9A1 GDZJ 9.1 B C A B C D A 5 6.0 0.5 5 25 0.5 120 Z9B1 Z9C1 Z10A Z10B Z10C Z11D Z11A GDZJ 10 5 7.0 0.2 5 30 0.5 120 GDZJ 11 B C 5 8.0 0.2 5 30 0.5 120 Z11B Z11C GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE Part Number GDZJ 12 LA S S A B C A V Z @ IZ T M i n. V 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.80 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 20.15 20.64 21.08 21.52 22.05 22.61 23.12 23.63 24.26 24.97 25.63 26.29 26.99 27.70 28.36 29.02 29.68 30.32 30.90 31.49 32.14 32.79 33.40 34.01 34.68 35.36 36.00 36.63 40.00 44.00 48.00 53.00 M a x. V 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.70 18.33 18.96 19.59 20.22 20.72 21.20 21.71 22.17 22.63 23.18 23.77 24.31 24.85 25.52 26.26 26.95 27.64 28.39 29.13 29.82 30.51 31.22 31.88 32.50 33.11 33.79 34.49 35.13 35.77 36.47 37.19 37.85 38.52 45.00 49.00 54.00 60.00 IZ (mA ) 5 VR (V ) 9.0 IR ( u A ) MA X 0.2 Iz t (mA ) 5 Z ZT( Ω ) MA X 30 Iz k (mA ) 0.5 Z ZK ( Ω ) MA X 110 M A RK ING C OD E Z12A Z12B Z12C Z13A GDZJ 13 B C A 5 10 0.2 5 35 0.5 110 Z13B Z13C Z15A GDZJ 15 B C A 5 11 0.2 5 40 0.5 110 Z15B Z15C Z16A GDZJ 16 B C A 5 12 0.2 5 40 0.5 150 Z16B Z16C Z18A GDZJ 18 B C A B C D A B C D A B C D A B C D A B C D A B C D A B C D A B C D 5 13 0.2 5 45 0.5 150 Z18B Z18C Z20A Z20B Z20C Z20D Z22A Z22B Z22C Z22D Z24A Z24B Z24C Z24D Z27A Z27B Z27C Z27D Z30A Z30B Z30C Z30D Z33A Z33B Z33C Z33D Z36A Z36B Z36C Z36D Z39A Z39B Z39C Z39D Z43 Z47 Z51 Z56 GDZJ 20 5 15 0.2 5 55 0.5 200 GDZJ 22 5 17 0.2 5 30 0.5 200 GDZJ 24 5 19 0.2 5 35 0.5 200 GDZJ 27 5 21 0.2 5 45 0.5 250 GDZJ 30 5 23 0.2 5 55 0.5 250 GDZJ 33 5 25 0.2 5 65 0.5 250 GDZJ 36 5 27 0.2 5 75 0.5 250 GDZJ 39 5 30 0.2 5 85 0.5 250 GDZJ 43 GDZJ 47 GDZJ 51 GDZJ 56 5 5 5 5 33 36 39 43 0.2 0.2 0.2 0.2 5 5 5 5 90 90 110 110 ----- ----- GDZJ - SERIES RATINGS AND CHARACTERISTIC CURVES R thJA –Therm.R esist. Junction/Ambient ( K /W ) 500 V Ztn – R elative Voltage Change 1.3 V Ztn=V Zt/VZ(25°C) 400 1.2 TK VZ =10 x 10–4/K 8 x 10–4/K 6 x 10–4/K 4 x 10–4/K 2 x 10–4/K 300 l l 1.1 200 100 TL =constant 1.0 0.9 0.8 –60 0 –2 x 10–4/K –4 x 10–4/K 0 0 5 10 15 20 l – Lead Length ( mm ) 0 60 120 180 240 Tj – Junction Temperature (°C ) Fig. 1 Thermal Resistance vs. Lead Length Fig. 4 Typical Change of Working Voltage vs. Junction Temperature TK V Z – Temperature Coefficient of V Z ( 10– 4 /K) Pot – Total Power Dissipation ( mW) t 600 500 400 300 200 15 10 5 I Z=5mA 0 100 0 0 40 80 120 160 200 Tamb – Ambient Temperature(°C ) –5 0 10 20 30 40 50 V Z – Z-Voltag e ( V ) Fig. 2 Total Power Dissipation vs. Ambient Temperature Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage 1000 CD – Diode Capacitance ( pF ) 200 VZ – Voltage Change ( mV ) Tj =25°C 150 V R=2V Tj =25°C 100 100 I Z=5mA 10 50 1 0 5 10 15 20 25 V Z – Z-Voltag e ( V ) 0 0 5 10 15 20 25 V Z – Z-Voltag e ( V ) Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Fig. 6 Diode Capacitance vs. Z-Voltage GDZJ - SERIES RATINGS AND CHARACTERISTIC CURVES 100 I F – Forward Current ( mA ) 50 Ptot=500mW = Tamb 25°C Tj =25°C 1 I Z – Z- Current (mA ) 10 40 30 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 V F – Forward Voltage ( V ) 20 10 0 15 20 25 30 35 V Z – Z-Voltag e ( V ) Fig. 7 Forward Current vs. Forward Voltage Fig. 9 Z-Current vs. Z-Voltage I Z – Z- Current (mA ) 80 Ptot=500mW Tamb 25°C = r Z – Differential Z- R esistance ( Ω ) 100 1000 I Z=1mA 100 60 5mA 10 10mA 40 20 0 0 4 8 12 16 20 1 0 5 10 15 Tj =25°C 20 25 V Z – Z-Voltage ( V ) V Z – Z-Voltage ( V ) Fig. 8 Z-Current vs. Z-Voltage Zthp– Thermal R esistance for Pulse Cond.(K/W ) Fig. 10 Differential Z-Resistance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W T=Tjmax–Tamb 10 tp/T=0.1 tp/T=0.02 tp/T=0.05 tp/T=0.01 iZM =(–VZ+(VZ2+4rzj x T/Zthp)1/2 /(2r j) )z 1 10–1 100 101 tp – Pulse Length ( ms ) 102 Fig. 11 Thermal Response