HER105

HER105

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    HER105 - HIGH EFFICIENT SILICON RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
HER105 数据手册
HER101 THRU HER108 Reverse Voltage - 50 to 1000 Volts HIGH EFFICIENT SILICON RECTIFIER Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● DO-41 1.0 (25.4) MIN. 0.107(2.7) 0.080(2.0) DIA. MECHANICAL DATA Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.012 ounce, 0.33 grams 0.205(5.2) 0.166(4.2) 1.0 (25.4) MIN. 0.034(0.9) 0.028(0.7) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO HER 101 50 35 HER 102 100 70 HER 103 200 140 HER 104 300 210 1.0 HER 105 400 280 HER 106 600 420 HER 107 800 560 HER 108 1000 700 Unit V V A IFSM VFM IRM trr Cj Tj TSTG 50 20 1.0 30 1.3 5.0 100 75 15 -65 to +150 -65 to +150 1.7 A V µA nS pF °C °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. HER101 THRU HER108 RATINGS AND CHARACTERISTIC CURVES I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive or Inductive load IF, INSTANTANEOUS FORWARD CURRENT (A) 1.00 10 Tj = 25°C Pulse width = 300µs 0.75 1.0 HER101 - HER104 HER105 0.50 0.25 0.1 HER106- HER108 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 30 Pulse width 8.3 ms single half-sine-wave (JEDEC method) 100 Tj = 25°C f = 1.0MHz 20 Cj, CAPACITANCE (pF) HER101 - HER105 10 HER106- HER108 10 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 100 50Ω NI (Non-inductive) Device Under Test 50V DC Approx 10Ω NI +0.5A (-) Pulse Generator (Note 2) (+) (-) 0A -0.25A 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
HER105
1. 物料型号:HER101至HER108。

2. 器件简介:这些型号为高效能硅整流器,具有不同反向电压等级(50至1000伏特)和正向电流(1.0安培)。

3. 引脚分配:器件采用JEDEC DO-41模塑塑料外壳,带有镀层的轴向引线,可按照MIL-STD-750方法2026进行焊接。

4. 参数特性: - 峰值重复反向电压(VRRM)、工作峰值反向电压(VRWM)、直流阻断电压(VR):50至1000伏特不等。 - 有效值反向电压(VR(RMS)):35至700伏特不等。 - 平均整流输出电流@TA=55°C(Io):1.0安培。 - 非重复峰值正向浪涌电流(IFSM):30安培(HER102)。 - 正向电压@I=1.0A(VFM):1.0至1.7伏特不等。 - 峰值反向电流@TA=25°C(IRM):5微安培(HER103)。 - 反向恢复时间(trr):50至75纳秒不等。 - 典型结电容(C):15至20皮法拉。

5. 功能详解:这些整流器具有超快速开关以提高效率、低反向漏电、高正向浪涌电流能力以及保证在250°C下10秒的高温焊接能力。

6. 应用信息:适用于单相半波60Hz的电阻性或感性负载,对于电容性负载电流需降低20%。

7. 封装信息:外壳为JEDEC DO-41模塑塑料体,引线为可焊性镀层轴向引线,极性通过色环表示阴极端,安装位置任意,重量为0.012盎司或0.33克。
HER105 价格&库存

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