HER306

HER306

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    HER306 - HIGH EFFICIENT SILICON RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
HER306 数据手册
HER301 THRU HER308 Reverse Voltage - 50 to 1000 Volts HIGH EFFICIENT SILICON RECTIFIER Forward Current - 3.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● DO-201AD 1.0 (25.4) MIN. 0.220(5.6) 0.197(5.0) DIA. 0.375(9.5) 0.285(7.2) MECHANICAL DATA Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams 1.0 (25.4) MIN. 0.052(1.3) 0.048(1.2) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 3.0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO HER 301 50 35 HER 302 100 70 HER 303 200 140 HER 304 300 210 3.0 HER 305 400 280 HER 306 600 420 HER 307 800 560 HER 308 1000 700 Unit V V A IFSM VFM IRM trr Cj Tj TSTG 50 80 1.0 150 1.3 10 100 75 50 -65 to +150 -65 to +150 1.7 A V µA nS pF °C °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. HER301 THRU HER308 RATINGS AND CHARACTERISTIC CURVES I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive or Inductive load IF, INSTANTANEOUS FORWARD CURRENT (A) 4 100 3 10 HER301 - HER304 HER305 2 1.0 HER306 - HER308 1 0.1 Tj = 25°C Pulse width = 300µs 2% duty cycle 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.01 0.6 1.0 1.4 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 200 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms single half sine-wave 100 HER301 - HER305 Cj, CAPACITANCE (pF) 100 HER306 - HER308 10 10 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 100 50Ω NI (Non-inductive) Device Under Test 50V DC Approx 10Ω NI +0.5A (-) Pulse Generator (Note 2) (+) (-) 0A -0.25A 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
HER306
### 物料型号 - HER301至HER308

### 器件简介 - 高效率硅整流器,反向电压范围从50至1000伏特,正向电流为3.0安培。

### 引脚分配 - 器件采用JEDEC DO-201AD塑封体,带有镀层的轴向引脚,可按照MIL-STD-750标准进行焊接。

### 参数特性 - 工作峰值反向电压(VRRM)、工作峰值反向电压(VRWM)、直流阻断电压(VR)等参数随型号不同而变化,范围从50至1000伏特。 - 正向电压(VFM)和非重复峰值正向浪涌电流(IFSM)等参数也随型号不同而变化。 - 反向恢复时间(trr)和典型结电容(CI)等参数同样随型号不同而变化。

### 功能详解 - 器件具有超快开关特性,用于高效率应用。 - 低反向漏电流和高正向浪涌电流能力。 - 保证在高温下可承受250°C/10秒的焊接,引脚长度为0.375英寸(9.5mm),张力为5磅(2.3kg)。

### 应用信息 - 适用于需要高效率整流的应用场合,如电源、电机驱动等。

### 封装信息 - 封装类型为DO-201AD塑封体,引脚为镀层的轴向引脚,极性通过色带标识阴极端。
HER306 价格&库存

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