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HER504

HER504

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    HER504 - HIGH EFFICIENT SILICON RECTIFIER - Diotech Company.

  • 数据手册
  • 价格&库存
HER504 数据手册
HER501 THRU HER508 Reverse Voltage - 50 to 1000 Volts HIGH EFFICIENT SILICON RECTIFIER Forward Current - 5.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● DO-201AD 1.0 (25.4) MIN. 0.220(5.6) 0.197(5.0) DIA. 0.375(9.5) 0.285(7.2) MECHANICAL DATA Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams 1.0 (25.4) MIN. 0.052(1.3) 0.048(1.2) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 5.0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO HER 501 50 35 HER 502 100 70 HER 503 200 140 HER 504 300 210 5.0 HER 505 400 280 HER 506 600 420 HER 507 800 560 HER 508 1000 700 Unit V V A IFSM VFM IRM trr Cj Tj TSTG 50 75 1.0 150 1.3 10 100 75 50 -65 to +150 -65 to +150 1.7 A V µA nS pF °C °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. HER501 THRU HER508 RATINGS AND CHARACTERISTIC CURVES 8 100 Single phase half wave Resistive or Inductive load I(AV), AVERAGE FWD RECTIFIED CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) HER501 - 504 HER505 6 10 4 1.0 HER506 - HER508 2 0.1 Tj = 25° C Pulse width = 300 µs 2% duty cycle 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE ( °C) Fig. 1 Forward Current Derating Curve 0.01 0.6 1.0 1.4 1.8 V F, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 200 IFSM , PEAK FORWARD SURGE CURRENT (A) 8.3ms single half sine-wave 1000 100 Cj, CAPACITANCE (pF) HER501 - HER505 100 HER506 - HER508 10 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 10 1 10 V R, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr +0.5A 50Ω NI (Non-inductive) 10Ω NI 100 Device Under Test (-) Pulse Generator (Note 2) 0A -0.25A (+) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
HER504 价格&库存

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