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KBU1001

KBU1001

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    KBU1001 - SINGLE PHASE SILICON BRIDGE RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
KBU1001 数据手册
KBU10005 THRU KBU1010 Reverse Voltage - 50 to 1000 Volts SINGLE PHASE SILICON BRIDGE RECTIFIER Forward Current - 10.0 Ampere FEATURES ● ● ● ● KBU .157(4.0)*45° .935(23.7) .895(22.7) .15 X23L (3.8 X5.7L) HOLE THRU Ideal for printed circuit board Surge overload rating: 300A peak High case dielectric strength High temperature soldering guaranteed: 260°C/10 seconds at 5lbs. (2.3kg) tension .700(17.8) .600(16.8) 300 (7.5) .780(19.8) .740(18.8) MECHANICAL DATA C ase: UL-94 Class V-0 recognized Flame Retardant Epoxy ●T erminals : Plated leads solderable per MIL-STD 202, method 208 ● M ounting Position: Any ● Marking: Type Number ● 1.00 MIN. (25.4) .052(1.3)DIA. .048(1.2)TYP. .087(2.2) .071(1.8) .220(5.6) .180(4.6) .276(7.0) .256(6.5) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VF M IR I2t R JC KBU 10005 50 35 KBU 1001 100 70 KBU 1002 200 140 KBU 1004 400 280 10.0 300 1.0 10 1.0 373 8.0 -65 to +150 KBU 1006 600 420 KBU 1008 800 560 KBU 1010 1000 700 Unit V V A A V µA mA 2 As Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) Peak Reverse Current At Rated DC Blocking Voltage Rating for Fusing (t < 8.3ms) (Note 1) Typical Thermal Resistance (Note 2) Operating and Storage Temperature Range @IF = 5.0A @TC = 25°C @TC = 100°C K/W °C Tj, TSTG Note: 1. Non-repetitive for t > 1ms and < 8.3ms. 2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas. KBU8005 THRU KBU810 RATINGS AND CHARACTERISTIC CURVES FIG.1- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER BRIDGE ELEMENT 8 8.3ms Single Half Sine Wave JEDEC Method 300 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT. (A) 250 200 150 100 50 0 AVERAGE FORWARD CURRENT. (A) TJ=25 0C 6 4 2 MOUNTED ON 4X4 INCH COPPER PC BOARD 0.5" (12.7mm) LEAD LENGTH 0 50 100 o 1 2 5 10 20 50 100 0 150 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER BRIDGE ELEMENT 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 100 INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 40 20 10 Tj=100 0C 10 4 2 1 1 0.4 0.2 0.1 0.6 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.1 0 20 40 0 Tj=25 0C 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
KBU1001
1. 物料型号: - KBU10005至KBU1010是单相硅桥式整流器的型号。

2. 器件简介: - 这些整流器适用于印刷电路板,具备抗浪涌过载能力,峰值300A,高机箱耐压强度,并且在高温下焊接保证260°C/10秒,5磅(2.3公斤)张力。

3. 引脚分配: - 引脚为镀层引线,符合MIL-STD 202标准,方法208,可进行波峰焊。

4. 参数特性: - 包括反向电压、正向电流、非重复峰值正向浪涌电流、正向电压(每个元件)、额定直流阻断电压下的峰值反向电流、额定时间内的熔断电流(t<8.3ms)和典型热阻等参数。

5. 功能详解: - 这些整流器适用于单相半波60Hz的电阻性或感性负载,对于电容性负载需降低20%的电流。详细参数包括不同型号的峰值重复反向电压、工作峰值反向电压、直流阻断电压、有效值反向电压、在100°C时的平均整流输出电流、非重复峰值正向浪涌电流、在5.0A时的正向电压、在25°C和100°C时的峰值反向电流、额定时间内的熔断电流和典型热阻等。

6. 应用信息: - 这些整流器适用于需要单相整流的应用场合,例如电源、电机驱动等。

7. 封装信息: - 封装材料为UL-94 V-0级阻燃环氧树脂,尺寸以英寸和毫米给出,具体尺寸见图示。
KBU1001 价格&库存

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