MURF1015

MURF1015

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    MURF1015 - SUPER FAST RECOVERY SILICON RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
MURF1015 数据手册
MURF1005 THRU MURF1060 Reverse Voltage - 50 to 600 Volts SUPER FAST RECOVERY SILICON RECTIFIER Forward Current - 10.0 Ampere FEATURES Glass Passivated Die Construction Super-Fast Switching Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O 10.2± 0.2 ITO-220AC 4.5± 0.2 3.1+0.2 -0.1 15.2± 0.5 3.3± 0.1 16.5± 0.3 13.5± 0.5 MECHANICAL DATA Case: ITO-220AC, Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. . . 1 PIN 2 4.0± 0.3 1.4± 0.1 0.6± 0.1 8.2± 0.2 5.0± 0.1 0.6± 0.1 Dimensions in millimeters PIN 1 + PIN 3 - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 105°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 10.0A Symbol VRRM VRWM VR VR(RMS) IO MURF 1005 MURF 1010 MURF 1015 MURF 1020 MURF 1030 MURF 1040 MURF 1060 ? 3.2± 0.2 2.6± 0.2 Unit V V A A 50 35 100 70 150 105 200 140 10.0 150 300 210 400 280 600 420 IFSM VFM IRM trr Cj Tj, TSTG 35 70 0.95 1.3 10 500 50 50 -65 to +150 1.7 V µA nS pF °C Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MURF1005 THRU MURF1060 RATINGS AND CHARACTERISTIC CURVES 8 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 I(AV), AVERAGE FORWARD CURRENT (A) 100 1005 - 1020 10 1030 - 1040 6 4 1.0 1060 2 Pulse width = 300 µs 2% duty cycle 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.1 0.2 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 180 IFSM, PEAK FORWARD SURGE CURRENT (A) 150 8.3 ms single half-sine-wave JEDEC method 400 1005 - 1020 120 90 Cj, CAPACITANCE (pF) 100 60 30 0 10030 - 1060 10 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
MURF1015
物料型号: - MURF1005至MURF1060

器件简介: - 这些是超快速回复硅整流器,具有玻璃钝化芯片结构,超快速开关,低正向电压降,低反向漏电流,高浪涌电流能力,塑料材料具有UL可燃性分类94V-0。

引脚分配: - 封装为ITO-220AC,全模塑料端子,镀层引线,根据MIL-STD-202,方法208可焊。

参数特性: - 反向电压:50至600伏特 - 正向电流:10.0安培 - 峰值重复反向电压(VRRM)和工作峰值反向电压(VRWM)范围从50至600伏特 - 直流阻断电压(VR)和RMS反向电压(VR(RMS))范围从35至420伏特 - 平均整流输出电流@T=105℃为10.0A - 非重复峰值正向浪涌电流(IFSM)为150A,叠加在额定负载上(JEDEC方法) - 正向电压@I=10.0A(VFM)范围从0.95至1.7伏特 - 额定直流阻断电压下的峰值反向电流(IRM)为500至10微安 - 反向恢复时间(tr)为35至50纳秒 - 典型结电容(C)为70至50皮法

功能详解: - 该器件适用于需要超快速回复和高浪涌电流能力的整流应用,如电源、电机控制和变频器。

应用信息: - 适用于各种整流应用,特别是在需要高效率和高可靠性的场合。

封装信息: - 封装为ITO-220AC,全模塑料,任何位置安装,最大安装扭矩为11.5cm-kg(10in-lbs)。
MURF1015 价格&库存

很抱歉,暂时无法提供与“MURF1015”相匹配的价格&库存,您可以联系我们找货

免费人工找货