MURF1030CT

MURF1005CT THRU MURF1060CT Reverse Voltage - 50 to 600 Volts SUPER FAST RECOVERY SILICON RECTIFIER Forward Current - 10.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Super fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.25 ”(6.35mm) from case ● ITO-220AB .138(3.5) .122(3.1) .118(3.0) .102(2.6) .189(4.8) .173(4.4) .118(3.0) .106(2.7) .406(10.3) .386(9.8) MECHANICAL DATA ● Case: JEDEC ITO-220AB molded plastic body ● Terminals: Plated leads, solderable per MIL-STD-750, ● High temperature soldering guaranteed: o .157(4.0) .142(3.6) .610(15.5) .571(14.5) Method 2026 ● ● ● ● 250 C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams .059(1.5) .043(1.1) .030(0.76) .020(0.51) .112(2.84) .088(2.24) .071(1.8) .055(1.4) .571(14.5) .531(13.5) .114(2.9) .098(2.5) .030(0.76) .020(0.51) PIN 1 PIN 3 + PIN 2 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 5.0A Symbol VRRM VRWM VR VR(RMS) IO MURF MURF MURF MURF 1005CT 1010CT 1015CT 1020CT MURF 1030CT MURF MURF 1040CT 1060CT Unit 50 35 100 70 150 105 200 140 10 300 210 400 280 600 420 V V A IFSM VFM IRM trr Cj Tj, TSTG 35 80 0.95 150 1.3 10 400 50 50 -65 to +150 1.7 A V µA nS pF °C Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MURF1005CT THRU MURF1060CT RATINGS AND CHARACTERISTIC CURVES 12 10 8 6 4 2 0 0 50 100 150 .1 1 300V-400V 600V 50 50V-200V 10 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 80 60 40 20 0 400 TJ = 25 F=1.0MHZ Vsig=50mVp-p 100 50V-400V 600V 1 10 50 100 10 0.1 1 10 100 1000 T =125 J 100 10 1 T =25 J .1 0 20 40 60 80 100 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm