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MURF1660CT

MURF1660CT

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    MURF1660CT - SUPER FAST RECOVERY SILICON RECTIFIER - Diotech Company.

  • 数据手册
  • 价格&库存
MURF1660CT 数据手册
MURF1605CT THRU MURF1660CT Reverse Voltage - 50 to 600 Volts SUPER FAST RECOVERY SILICON RECTIFIER Forward Current - 16.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Super fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.25 ”(6.35mm) from case ● ITO-220AB .138(3.5) .122(3.1) .118(3.0) .102(2.6) .189(4.8) .173(4.4) .118(3.0) .106(2.7) .406(10.3) .386(9.8) MECHANICAL DATA ● Case: JEDEC ITO-220AB molded plastic body ● Terminals: Plated leads, solderable per MIL-STD-750, ● High temperature soldering guaranteed: o .157(4.0) .142(3.6) .610(15.5) .571(14.5) Method 2026 ● ● ● ● 250 C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams .059(1.5) .043(1.1) .030(0.76) .020(0.51) .112(2.84) .088(2.24) .071(1.8) .055(1.4) .571(14.5) .531(13.5) .114(2.9) .098(2.5) .030(0.76) .020(0.51) PIN 1 PIN 3 + PIN 2 Dim ensions in inches and (m illim eters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 105°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 8.0A Symbol VRRM VRWM VR VR(RMS) IO MURF MURF MURF MURF 1605CT 1610CT 1615CT 1620CT MURF 1630CT MURF MURF 1640CT 1660CT Unit 50 35 100 70 150 105 200 140 16 300 210 400 280 600 420 V V A IFSM VFM IRM trr Cj Tj, TSTG 35 80 0.95 125 1.3 10 500 50 60 -65 to +150 1.7 A V µA nS pF °C Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MURF1605CT THRU MURF1660CT RATINGS AND CHARACTERISTIC CURVES IF, INSTANTANEOUS FORWARD CURRENT (A) 20 I(AV), AVERAGE FORWARD CURRENT (A) 100 16 1605 - 1620 10 1630 - 1640 12 8 1.0 1660 4 Pulse width = 300µs 2% duty cycle 0 0.1 0 0.6 1.2 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 225 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3 ms single half-sine-wave JEDEC method 400 Tj = 25°C f = 1.0MHz 150 Cj, CAPACITANCE (pF) 100 MURF1605CTMURF1620CT 75 MURF1640CTMURF1660CT 0 1 10 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 50Ω NI (Non-inductive) Device Under Test 50V DC Approx 10Ω NI +0.5A (-) Pulse Generator (Note 2) (+) (-) 0A -0.25A 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
MURF1660CT 价格&库存

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