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MURF3020PT

MURF3020PT

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    MURF3020PT - SUPER FAST RECOVERY SILICON RECTIFIER - Diotech Company.

  • 数据手册
  • 价格&库存
MURF3020PT 数据手册
MURF3005PT THRU MURF3060PT Reverse Voltage - 50 to 600 Volts SUPER FAST RECOVERY SILICON RECTIFIER Forward Current - 30.0 Ampere FEATURES Super-Fast Switching Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O 6.5± 0.3 TO-3P 15.8± 0.2 8.0± 0.2 4.9± 0.25 5.0± 0.15 2.0± 0.15 Glass Passivated Die Construction 21± 0.5 3.6± 0.15 PIN 1 2 3 2.4± 0.2 2.2± 0.15 3.0± 0.1 MECHANICAL DATA Case: TO-3P, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026 Polarity: See Diagram Weight: 5.6 grams (approx.) Mounting Position: Any Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. 20.4± 0.4 1.2± 0.15 0.6± 0.1 5.4± 0.15 Dimensions in millimeters PIN 1 PIN 3 - + Case, PIN 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 15.0A Symbol VRRM VRWM VR VR(RMS) IO MURF MURF 3005PT 3010PT MURF 3015PT MURF 3020PT MURF 3030PT MURF MURF 3040PT 3060PT Unit 50 35 100 70 150 105 200 140 30 300 210 400 280 600 420 V V A IFSM V FM IRM trr Cj Tj, TSTG 35 150 0.975 300 1.3 10 500 50 120 -65 to +150 1.7 A V µA nS pF °C Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MURF3005PT THRU MURF3060PT RATINGS AND CHARACTERISTIC CURVES 30 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 I(AV), AVERAGE FORWARD CURRENT (A) 24 3005 - 3020 3030 - 3040 10 18 12 3040 - 3060 1.0 6 Pulse width = 300 s µ 2% duty cycle 0 0 50 100 150 TC, CASE TEMPERATURE ( °C) Fig. 1 Forward Current Derating Curve 0.1 0 5 0. 0 1. 5 1. V F, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 400 8.3 ms single half-sine-wave JEDEC method IFSM , PEAK FORWARD SURGE CURRENT (A) Tj = 25° C f = 1.0MHz Cj, CAPACITANCE (pF) 200 3005PT 3040PT 100 3060PT 100 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 10 0.1 1.0 10 100 V R, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) Pulse Generator (Note 2) 0A -0.25A (+) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M Ω, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
MURF3020PT 价格&库存

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