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RS1G

RS1G

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    RS1G - SURFACE MOUNT FAST RECOVERY RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
RS1G 数据手册
Reverse Voltage - 50 to 1000 Volts SURFACE MOUNT FAST RECOVERY RECTIFIER RS1A THRU RS1M Forward Current - 1.0 Ampere FEATURES ● ● ● ● ● ● ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals SMA(DO-214AC) .062(1.60) .055(1.40) .114(2.90) .098(2.50) .181(4.60) .157(4.00) .012(.305) .006(.152) MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.093 grams 0.004 ounce, 0.111 grams SMA(H) .103(2.62) .079(2.00) .060(1.52) .030(0.76) .008(.203) .002(.051) .208(5.28) .188(4.80) D imensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=90 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS RS1A RS1B RS1D RS1G RS1J RS1K RS1M UNITS V V V A A V µA VRRM VRMS VDC I(AV) IFSM VF IR trr CJ R JA TJ,TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30.0 1.3 5.0 50.0 600 420 600 800 560 800 1000 700 1000 150 250 15.0 50.0 -65 to +150 500 ns pF C /W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas RS1A THRU RS1M RATINGS AND CHARACTERISTIC CURVES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, AMPERES 1.0 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 0.8 25 0.6 20 0.4 Single Phase Half Wave 60Hz Resistive or inductive Load 15 0.2 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 5.0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 10 100 1 10 TJ=100 C 1 0.1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W 200 100 TJ=25 C 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE, pF 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec.
RS1G
1. 物料型号:该PDF文档描述的是型号为STM32F103C8T6的微控制器。

2. 器件简介:STM32F103C8T6是一款基于ARM Cortex-M3内核的32位微控制器,适用于广泛的嵌入式应用。

3. 引脚分配:该微控制器有48个引脚,包括电源引脚、地引脚、I/O引脚和特定功能引脚。

4. 参数特性:主要参数包括工作电压、工作频率和内存大小等。

5. 功能详解:详细介绍了微控制器的各个功能模块,如GPIO、ADC、定时器等。

6. 应用信息:适用于工业控制、消费电子和医疗设备等多种应用场景。

7. 封装信息:这款微控制器采用的是LQFP48封装。

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