S1B

S1B

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    S1B - SURFACE MOUNT GENERAL RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
S1B 数据手册
S1A THRU S1M Reverse Voltage - 50 to 1000 Volts SURFACE MOUNT GENERAL RECTIFIER Forward Current - 1.0 Ampere FEATURES Glass Passivated Die Construction ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● For surface mounted applications ● Low reverse leakage ● Built-in strain relief,ideal for automated placement ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds at terminals ● SMA(DO-214AC) .062(1.60) .055(1.40) .114(2.90) .098(2.50) .181(4.60) .157(4.00) .012(.305) .006(.152) .103(2.62) .079(2.00) .060(1.52) .030(0.76) .008(.203) .002(.051) MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.093 grams 0.004 ounce, 0.111 grams SMA(H) .208(5.28) .188(4.80) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 1.0A @TA = 25°C @TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj R JL @TA=25°C unless otherwise specified S1A 50 35 S1B 100 70 S1D 200 140 S1G 400 280 1.0 30 1.10 5.0 200 15 30 -65 to +175 S1J 600 420 S1K 800 560 S1M 1000 700 Unit V V A A V µA pF °C/W °C Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. S1A THRU S1M RATINGS AND CHARACTERISTIC CURVES IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 IO, AVERAGE OUTPUT CURRENT (A) 10 0.8 0.6 1.0 0.4 0.1 0.2 Resistive or inductive load 0 40 0.01 0 0.4 0.8 Tj = 25° C PULSE WIDTH = 300µs 2% DUTY CYCLE 60 80 100 120 140 160 180 1.2 1.6 TL , LEAD TEMPERATURE ( °C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms Single half sine-wave JEDEC Method 25 IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 100 Tj = 125° C 20 10 15 1.0 Tj = 25° C 10 0.1 5 1 10 100 0.01 0 40 80 120 NUMBER OF CYCLES @ 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics
S1B
1. 物料型号: - 型号为S1A至S1M,这些是表面贴装通用整流器。

2. 器件简介: - 这些器件是表面贴装整流器,具有玻璃钝化芯片结构,塑料封装符合UL94V-0可燃性分类,适用于表面贴装应用,具有低反向漏电流、内置缓解应力设计,适合自动化放置,高正向浪涌电流能力,保证高温焊接性能。

3. 引脚分配: - 引脚为焊锡镀层,符合MIL-STD-750方法2026的可焊性,极性通过色带表示阴极端,可安装在任何位置。

4. 参数特性: - 包括反向重复峰值电压、工作峰值反向电压、直流阻断电压、RMS反向电压、平均整流输出电流、非重复峰值正向浪涌电流、正向电压、额定直流阻断电压下的峰值反向电流、典型结电容和典型热阻等参数。

5. 功能详解: - 器件具有高正向浪涌电流能力,保证高温焊接性能,低反向漏电流,适合自动化放置。

6. 应用信息: - 适用于需要整流功能的表面贴装应用。

7. 封装信息: - 封装为JEDEC DO-214AC塑封体,重量分别为0.003盎司(约0.093克)和0.004盎司(约0.111克)。

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