NPB-USS-Y2

DOMINANT Semiconductors Innovating Illumination TM DATA SHEET: SPNovaLEDTM InGaN Blue : 1 Watt SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output. > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 20 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to both IR reflow soldering. > Environmental friendly; RoHS compliance. > SP NovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > Automotive: exterior applications, eg: Center High Mounted Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc. > Communication: indicator and backlight in mobilephone. > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 24/08/2006 V2.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Blue : 1 Watt Part Ordering Number NPB-USS-X2Y-1 • NPB-USS-X2 • NPB-USS-Y1 • NPB-USS-Y2 Chip Technology / Color InGaN Blue, 470 Viewing Angle˚ 120 Luminous Intensity @ IF = 350mA (mcd) 2240.0 - 4500.0 2240.0 - 2850.0 2850.0 - 3550.0 3550.0 - 4500.0 NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Wavelength Grouping Color NPB; Blue Group Full A B Wavelength distribution (nm) 464 - 476 464 - 470 470 - 476 Dominant wavelength is measured with an accuracy of ± 1 nm. Electrical Characteristics at Ta=25˚C Part Number NPB-USS Typ. (V) 3.6 Vf @ If = 350mA Max. (V) 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Optical Characteristics at Ta=25˚C Part Number Min. NPB-USS-X2Y 2,240 Intensity @ If=350mA (mcd) Typ. 3,000 Max. 4,500 2 24/08/2006 V2.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Blue : 1 Watt Correlation Between Luminous Intensity And Luminous Flux IV Bins X2 Y1 Y2 Luminous Intensity (mcd) Min. 2,240 2,850 3,550 Luminous Flux (lm) Min. 5.8 7.4 9.2 Max. 2,850 3,550 4,500 Max. 7.4 9.2 11.7 Note: Data provided above is based on approximation Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating Absolute Maximum Ratings Maximum Value DC forward current Pulse current Reverse Voltage ESD Threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 … +100 -40 … +100 Unit mA mA V V ˚C ˚C ˚C 3 24/08/2006 V2.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Blue : 1 Watt Relative Flux Vs Forward Current Relative Flux, Normalized at 350mA Relative Flux 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Wavelength Vs Forward Current Relative Intensity, Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Forward Current, mA Forward Current, mA Forward Current Vs Forward Voltage 500 400 300 200 100 0 2 2.5 3 3.5 4 4.5 Forward Current Vs Ambient Temperature (Rja=40KW) Forward Current Vs Ambient Temperature 400 350 Forward Current, mA Forward Current, mA 300 250 200 150 100 50 0 0 20 40 60 80 100 Forward Voltage, V Ambient Temperature Forward Current Vs SolderTemperature Forward Current Vs Point Temperature 400 350 Wavelength Vs Forward Current 471 Forward Current, mA 250 200 150 100 50 0 0 20 40 60 80 100 Wavelength, nm 300 470.5 470 469.5 469 0 200 400 600 800 1000 Solder Temperature Point Temperature 4 Forward Current, mA 24/08/2006 V2.0 DOMINANT TM Innovating Illumination Forward Voltage, V Wavelength, nm Semiconductors SPNovaLED InGaN Blue : 1 Watt Maximum Permissible Pulse Current 1000 900 Forward CurrentRadiation Pattern Vs Ambient Temperature (Rja=40K/W) 30 o 20 o 10 o 0o 400 350 1.0 Forward Current, mA Pulse Current, mA 60 70 80 90 100 40 o 300 250 200 150 100 50 0.8 800 700 600 500 400 300 200 1 10 100 50 o 60 o 0.6 0.4 70 80 o 0.2 o 0 0 10 20 30 90 o 0 40 50 Ambient Temperature Duty (%); Tp