NPC-USS-AD

DOMINANT Semiconductors Innovating Illumination TM DATA SHEET: SPNovaLEDTM InGaN Cyan : 1 Watt SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output. > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 20 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to both IR reflow soldering. > Environmental friendly; RoHS compliance. > SP NovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > Automotive: exterior applications, eg: Center High Mounted Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc. > Communication: indicator and backlight in mobilephone. > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 24/08/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Cyan : 1 Watt Part Ordering Number NPC-USS-ABD-1 • NPC-USS-AB • NPC-USS-AC • NPC-USS-AD Chip Technology / Color InGaN Cyan, 505 Viewing Angle˚ 120 Luminous Intensity @ IF = 350mA (mcd) 9000.0 - 18000.0 9000.0 - 11250.0 11250.0 - 14000.0 14000.0 - 18000.0 NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Wavelength Grouping Color NPC; Cyan Group Full W X Y Wavelength distribution (nm) 499 - 511 499 - 503 503 - 507 507 - 511 Dominant wavelength is measured with an accuracy of ± 1 nm. Electrical Characteristics at Ta=25˚C Part Number NPC-USS Typ. (V) 3.6 Vf @ If = 350mA Max. (V) 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Optical Characteristics at Ta=25˚C Part Number Min. NPC-USS-ABD 9,000 Intensity @ If=350mA (mcd) Typ. 12,000 Max. 18,000 2 24/08/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Cyan : 1 Watt Correlation Between Luminous Intensity And Luminous Flux IV Bins AB AC AD Luminous Intensity (mcd) Min. 9,000 11,250 14,000 Luminous Flux (lm) Min. 24.3 30.4 37.8 Max. 11,250 14,000 18,000 Max. 30.4 37.8 48.6 Note: Data provided above is based on approximation Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating Absolute Maximum Ratings Maximum Value DC forward current Pulse current Reverse Voltage ESD Threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 … +100 -40 … +100 Unit mA mA V V ˚C ˚C ˚C 3 24/08/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination SPNovaLED InGaN Cyan : 1 Watt Relative Flux Vs Forward Current Forward Current Vs Forward Voltage Relative Flux, Normalized at 350mA Relative Flux Forward Current, mA 1.4 60 1.2 50 1 40 0.8 30 0.6 20 0.4 10 0.2 0 0 0 2.5 3 200 3.5 400 4 600 4.5 Wavelength Vs Vs Forward Current Relative Intensity Forward Current Relative Intensity, Normalized at 350mA 1.4 2.5 1.2 2 Relative Intensity 1 1.5 0.8 0.6 0.4 0.2 1 0.5 00 00 20 200 40 400 60 80 600 100 Forward Current, mA Forward Current, mA Forward Current, mA Forward Voltage, V Forward Current Vs Forward Voltage Maximum Current Vs Temperature 500 35 30 400 25 ForwardDominant Wavelength Vs Forward Current Current Vs Ambient Temperature (Rja=40KW) Forward Current Vs Ambient Temperature 400 540 Forward Current, mA Dominant Wavelength, nm 20 10 2.5 20 30 3 40 50 3.5 60 350 535 300 250 530 200 525 150 100 520 50 0 515 Forward Current, mA Forward Current, mA 300 20 15 200 10 100 5 00 70 4 80 90 4.5 100 0 0 20 10 2040 30 60 40 80 50 100 60 Forward Voltage, V Ambient Temperature Ambient Temperature Forward Current, mA Forward CurrentCurrent Vs Point Temperature Forward Vs Solder Temperature Dominant Wavelength Vs Forward Current 400 515 Wavelength Vs Forward Current Dominant Wavelength Vs Forward Current 471 470 Wavelength, nm Dominant Wavelength, nm 00 20 10 2040 30 60 40 Forward Current, mA Dominant Wavelength, nm 350 300 510 250 200 505 150 100 500 50 0 495 8050 100 60 469 470.5 468 470 467 466 469.5 465 469 464 0 0 200 10 400 20 30 600 40 80050 1000 60 Solder Temperature mA Point Temperature Forward Current, 4 Forward Current, mA Forward Current, mA 24/08/2006 V1.0 DOMINANT TM Innovating Illumination Forward Voltage, V Wavelength, nm Semiconductors SPNovaLED InGaN Cyan : 1 Watt Maximum Permissible Pulse Current Maximum Permissible Pulse Current, Ta=25 ˚C 1000 900 Forward CurrentRadiation Pattern Vs Ambient Temperature (Rja=40K/W) 30 o 20 o 10 o 0o 400 350 1.0 Forward Current, mA Pulse Current, mA 50 60 70 80 90 100 40 o 300 250 200 150 100 50 0 0 10 20 30 0.8 800 700 600 500 400 300 200 1 10 100 50 o 60 o 0.6 0.4 70 o 0.2 80 o 90 o 0 40 Ambient Temperature Duty (%); Tp