NPF-TSD-AB

DOMINANT Innovating Illumination TM TM Semiconductors SPNovaLED DATA SHEET: InGaN Warm White High Lumens : 350 mA SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output; typical 42 lumens > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 18 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > > > > Automotive: exterior applications, eg: Fog-lamp, Rear Mirror Lighting, etc Communication: FlashLED Industry: white goods (eg: Oven, microwave, etc.). Lighting: garden light, architecture lighting, general lighting. etc © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Part Ordering Number NPF-TSD-ABD-1 • NPF-TSD-AB • NPF-TSD-AC • NPF-TSD-AD Chip Technology / Color InGaN Viewing Angle˚ 120 Luminous Intensity @ IF = 350mA (mcd) 9000.0 - 18000.0 9000.0 - 11250.0 11250.0 - 14000.0 14000.0 - 18000.0 NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Electrical Characteristics at Ta=25˚C Part Number NPF-TSD Typ. (V) 3.6 Vf @ If = 350mA Max. (V) 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating 2 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current Reverse Voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 … +100 -40 … +100 Unit mA mA V V ˚C ˚C ˚C Correlated Color Temperature (CCT) Color Bin A B C Minimum CCT (K) 3300 3000 2800 Maximum CCT (K) 3600 3300 3000 Note: CCT values provided for each of the color bins are an approximation based on correlation. Correlation Between Luminous Intensity And Luminous Flux IV Bin AB AC AD Luminous Intensity (mcd) Min 9000 11250 14000 Luminous Flux (lm) Min 25.0 32.0 39.0 Max 11250 14000 18000 Max 32.0 39.0 50.0 Note: Data provided above is based on approximation. 3 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens: 350 mA Color Bin White Bin Structure 0.48 0.44 0.40 0.36 0.32 0.28 0.24 0.20 0.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 • • A • • B • • C • • Chromaticity coordinate groups are measured with an accuracy of ± 0.01. Bin A B C Cx Cy Cx Cy Cx Cy 1 0.400 0.340 0.420 0.362 0.440 0.383 2 0.420 0.362 0.440 0.383 0.460 0.405 3 0.420 0.408 0.440 0.430 0.460 0.452 4 0.400 0.387 0.420 0.408 0.440 0.430 4 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Relative Flux Vs Forward Current Relative Flux; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Relative Intensity Vs Forward Current Relative Intensity; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Forward Current, mA Forward Current, mA Forward Current Vs Forward Voltage 600 500 Relative Spectral Emission 1 0.9 0.8 0.7 Forward Current, mA WarmWhite 2 2.5 3 3.5 4 4.5 400 300 200 100 0 0.6 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 Forward Voltage, V Wavelength, nm Forward Current Vs Ambient Temperature (Rja=40K/W) 400 350 Forward Current Vs Solder Point Temperature 400 350 Forward Current, mA Forward Current, mA 0 10 20 30 40 50 60 70 80 90 100 300 250 200 150 100 50 0 300 250 200 150 100 50 0 0 20 40 60 80 100 Ambient Temperature 5 Solder Point Temperature 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Maximum Permissible Pulse Current, Ta=25 1000 900 Radiation Pattern 30 o 20 o 10 o 0o 1.0 Pulse Current, mA 40 o 0.8 800 700 600 500 400 300 200 1 10 100 50 o 60 70 o 0.6 0.4 o 0.2 80 o 90 o 0 Duty (%); Tp