GP1600FSM12

GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS s s s s External connection C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Aux E E1 E2 External connection Fig.1 Single switch circuit diagram Aux C Aux E E1 C1 ORDERING INFORMATION Order As: GP1600FSM12 Note: When ordering, please use the complete part number. G E2 C2 Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP1600FSM12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC ICM Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current VGE = 0V Test Conditions Max. 1200 Units V V A A kW V DC, Tcase = 82˚C 1ms, Tcase = 112˚C ±20 1600 3200 13.9 2500 Maximum power dissipation Isolation voltage Tcase = 25˚C (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor Thermal resistance - diode Thermal resistance - Case to heatsink (per module) Junction temperature Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 - Min. –40 - Max. Units 9 20 8 150 125 125 5 2 10 o C/kW C/kW o o C/kW o C C o o C Nm Nm Nm 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(SAT) IF IFM VF Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC =1600A VGE = 15V, IC = 1600A, Tcase = 125˚C Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF =1600A IF =1600A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 2.7 3.2 2.2 2.3 180 15 Max. 2 75 8 6.5 3.5 4.0 1600 3200 2.4 2.5 Units mA mA µA V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP1600FSM12 INDUCTIVE SWITCHING CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery charge Conditions Min. - Typ. 1650 200 350 1600 450 160 100 170 Max. 1800 250 450 1750 550 Units ns ns mJ ns ns mJ µC µC IC = 1600A VGE = ±15V VCE = 600 RG(ON) = RG(OFF) = 3.3Ω L ~ 100nH - 200 130 - IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs - Tcase = 125˚C unless stated otherwise. td(off) tf EOFF td(on) tr EON Qrr Qrr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery charge IC = 1600A VGE = ±15V VCE = 600 RG(ON) = RG(OFF) = 3.3Ω L ~ 100nH IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs - 1900 250 400 1750 500 250 250 225 2100 300 500 2000 550 350 350 - ns ns mJ ns ns mJ µC µC 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 CURVES Vge = 20/15/12/10V 3200 2800 2400 Collector current, IC - (A) Vge = 20/15/12/10V 3200 Common emitter Tcase = 125˚C Common emitter Tcase = 25˚C 2800 2400 Collector current, IC - (A) 2000 1600 1200 800 400 0 0 2000 1600 1200 800 400 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig.5 Typical output characteristics Fig.6 Typical output characteristics 400 Conditions: Tcase = 25˚C, 350 VCE = 600V, VGE = 15V 300 Turn-on energy, Eon - (mJ) 450 400 Conditions: Tcase = 125˚C, VCE = 600V, VGE = 15V A A Turn-on energy, Eon - (mJ) 350 300 250 200 150 100 50 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω B C 250 B C 200 150 100 50 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 0 200 400 600 800 1000 1200 1400 1600 0 Collector current, IC - (A) Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP1600FSM12 600 Conditions: Tcase = 25˚C, VCE = 600V, 500 VGE = 15V Turn-off energy, Eoff - (mJ) 600 Conditions: Tcase = 125˚C, VCE = 600V, 500 VGE = 15V Turn-off energy, Eoff - (mJ) A A 400 B 300 C 400 B C 300 200 200 100 A : Rg = 3.3Ω B : Rg = 4.7Ω C : Rg = 7Ω 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 100 0 0 0 200 400 600 800 1000 Collector current, IC - (A) A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 1200 1400 1600 Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current 120 Conditions: VCE = 600V, VGE = 15V, 100 Rg = 3.3Ω Tcase = 125˚C 2500 td(off) 2000 td(on) 1500 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω Diode turn-off energy, Eoff(Diode) - (mJ) 60 Tcase = 25˚C 40 Switching times - (ns) 80 1000 500 20 tf tr 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 Fig.11 Typical diode turn-off energy vs collector current Fig.12 Typical switching times 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 3200 2800 2400 Tj = 25˚C Tj = 125˚C 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 Collector current, IC - (A) Forward current, IF - (A) 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 Conditions: VGE = ±15V Rg = 3.3Ω Tcase = 125˚C 200 400 600 800 1000 Collector-emitter voltage, VCE - (V) 1200 Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area 10000 IC max. (single pulse) 100 Transient thermal impedance, Zth(j-c) - (˚C/kW) 1000 IC Diode m ax Collector current, IC - (A) .D 50µs C (c on 100µs 10 Transistor tin uo 100 us ) tp = 1ms 1 10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 0.1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP1600FSM12 3000 2800 2600 2400 Collector current, IC - (A) 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 25 35 45 55 65 75 85 95 105 115 125 Case temperature, Tcase - (˚C) Fig.17 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 15 5 15 62 6 E1 Aux C 16 2.5 C1 57 Aux E 18.5 E2 C2 14.5 11 6x M4 35 20 4x M8 38 28 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3 Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Nominal weight: 1050g Module outline type code: F Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 31.5 43.3 57 65 G 18 6x Ø7 65 9/10 www.dynexsemi.com GP1600FSM12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5451-1 Issue No. 1.2 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com