GP200MHS12

GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) 9(C1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: GP200MHS12 Note: When ordering, please use the whole part number. 8 9 5 4 11 10 1 2 3 6 7 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP200MHS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage DC, Tcase = 72˚C 1ms, Tcase = 72˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 ±20 200 400 1490 2500 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 –40 150 125 125 5 5 ˚C ˚C ˚C Nm Nm 15 ˚C/kW 160 ˚C/kW Min. Max. 84 Units ˚C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 200A IF = 200A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 2.7 3.2 2.2 2.3 25 30 Max. 1 12 ±1 6.5 3.5 4.0 200 400 2.4 2.5 Units mA mA µA V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP200MHS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 200A, VR = 50% VCES, dIF/dt = 2500A/µs Test Conditions IC = 200A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 4.7Ω L ~ 100nH Min. Typ. 500 150 25 400 80 20 13 Max. 700 200 35 550 110 30 20 Units ns ns mJ ns ns mJ µC Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 200A, VR = 50% VCES, dIF/dt = 2000A/µs Test Conditions IC = 200A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 4.7Ω L ~ 100nH Min. Typ. 600 200 40 500 110 40 35 Max. 800 250 50 650 150 55 45 Units ns ns mJ ns ns mJ µC 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 400 350 300 Collector current, IC - (A) Collector current, IC - (A) Vge = 20/15/12/10V 400 Common emitter Tcase = 125˚C Common emitter Tcase = 25˚C 350 300 250 200 150 100 50 0 0 250 200 150 100 50 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 60 Tj = 125˚C VGE = ±15V 50 VCE = 600V Turn-on energy, EON - (mJ) 50 A Tj = 125˚C 45 VGE = ±15V VCE = 600V 40 Turn-off energy, EOFF - (mJ) A B C B 40 C 30 35 30 25 20 15 10 A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 50 100 150 Collector current, IC - (A) 200 20 10 0 0 A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 50 100 150 Collector current, IC - (A) 200 5 0 0 Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP200MHS12 18 16 VGE = ±15V VCE = 900V Tcase = 125˚C 900 800 700 Switching times, - (ns) Diode turn-off energy, Eoff(diode) - (mJ) 14 12 10 8 6 4 2 0 0 25 50 75 Tj = 125˚C VGE = ±15V VCE = 600V Rg = 4.7Ω td(off) td(on) 600 500 400 300 200 100 Tcase = 25˚C tf 100 125 150 175 200 0 0 tr 50 100 150 Collector current, IC - (A) 200 Collector current, IT - (A) Fig. 7 Diode typical turn-off energy vs collector current Fig. 8 Typical switching characteristics 400 350 300 Forward current, IF - (A) 10000 1000 IC max. (single pulse) Tj = 25˚C 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) Tj = 125˚C Collector current, IC - (A) 100 IC m 50µs ax .D C 100µs (c on tin uo 10 us ) tp = 1ms 1 3 3.5 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 Fig. 9 Diode typical forward characteristics Fig. 10 Reverse bias safe operating area 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS12 500 450 400 Collector current, IC - (A) 1000 Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode 350 300 250 200 150 100 50 0 0 Tcase = 125˚C Vge = ±15V Rg = 4.7Ω* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) RBSOA 1200 100 Transistor 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig. 11 Forward bias safe operating area Fig. 12 Transient thermal impedance 500 450 400 Inverter phase current, IC(PK) - (A) 350 300 250 200 150 100 Conditions: 50 Tj = 125°C, Tc = 75°C, Rg = 4.7Ω, VCC = 600V 0 1 10 fmax - (kHz) PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 320 280 240 Collector current, IC - (A) 50 200 160 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Case temperature, Tcase - (˚C) Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP200MHS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 ± 0.5 28 ± 0.5 11 6 62 ± 0.8 48 ± 0.3 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 ± 0.3 3x M6 8 38max 23 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS12 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP200MHS12 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5296-1 Issue No.1.5 November 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com