GP800FSM18

GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES s s s s High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s External connection C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram Aux C Aux E E1 C1 ORDERING INFORMATION Order As: GP800FSM18 Note: When ordering, please use the whole part number. G E2 C2 Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP800FSM18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 65˚C 1ms, Tcase = 100˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 ±20 800 1600 6940 4000 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 –40 150 125 125 5 2 10 ˚C ˚C ˚C Nm Nm Nm 8 ˚C/kW 40 ˚C/kW Min. Max. 18 Units ˚C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800FSM18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.5 4.3 2.2 2.3 90 20 Max. 1 25 4 6.5 4 5 800 1600 2.5 2.6 Units mA mA µA V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP800FSM18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 50% VCES, dIF/dt = 3500A/µs Test Conditions IC = 800A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 1000 200 200 300 200 200 180 450 120 Max. 1200 300 300 400 300 300 240 Units ns ns mJ ns ns mJ µC A mJ Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 50% VCES, dIF/dt = 3000A/µs Test Conditions IC = 800A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 1200 250 300 400 250 350 300 525 190 Max. 1400 350 400 550 350 450 400 Units ns ns mJ ns ns mJ µC A mJ 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800FSM18 TYPICAL CHARACTERISTICS Vge = 20/15/12V 1600 1400 1200 Collector current, Ic - (A) 1600 Vge = 20/15/12V Common emitter Tcase = 125˚C Common emitter Tcase = 25˚C 1400 1200 Vge = 10V Vge = 10V Collector current, IC - (A) 1000 800 600 400 200 0 0 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V) 9.0 10.0 Fig.3 Typical output characteristics Fig.4 Typical output characteristics 350 Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 2.2Ω Ohm EON 700 Tcase = 125˚C VGE = ±15V VCE = 900V IC = 800A EON 300 600 250 Energy - (mJ) EOFF 500 Energy - (mJ) 200 EREC 150 400 EOFF 300 100 200 EREC 50 100 0 0 0 100 200 300 400 500 600 Collector current, IC - (A) 700 800 0 1 2 3 4 5 6 7 8 9 10 Gate resistance, RG - (Ohms) Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP800FSM18 1600 1400 Tj = 25˚C 1200 1000 Tj = 125˚C 800 600 400 2000 1800 1600 Collector current, IC - (A) Foward current, IF - (A) 1400 1200 1000 800 600 400 Tcase = 125˚C Vge = ±15V Rg(min) = 2.2Ω 200 0 0 200 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 3.5 0 0 1200 400 800 1600 Collector-emitter voltage, Vce - (V) 2000 Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area 10000 100 IC max. (single pulse) 1000 Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode Transistor Collector current, IC - (A) 10 50 µs 10 0µ s tp IC 100 = 1m s ax m .D C (c on tin 1 uo us 10 ) Conditions: Tvj = 125˚C, Tcase = 50˚C 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 0.1 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800FSM18 1800 1600 1400 1200 1000 800 600 400 200 0 1 fmax - (kHz) 10 20 Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 2.2Ω, VCC = 900V PWM Sine Wave Power Factor = 0.9, Modulation Index =1 1600 1400 1200 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 1000 800 600 400 200 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.17 3-Phase inverter operating frequency Fig.18 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP800FSM18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 15 5 15 62 6 E1 Aux C C1 18.5 16 2.5 Aux E E2 C2 14.5 11 6x M4 35 20 4x M8 38 28 5 140 Nominal weight: 1050g Module outline type code: F 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 31.5 43.3 57 65 6x Ø7 G 18 57 www.dynexsemi.com 65 GP800FSM18 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP800FSM18 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5402-1 Issue No.1.1 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com