MP03HBP360-08

MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces June 2001 version, DS4484-6.1 DS4484-7.0 July 2002 FEATURES s s s s s KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol Code Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium 1200V 352A 10600A 3000V Circuit APPLICATIONS s s s s Motor Control Controlled Rectifier Bridges Heater Control AC Phase Control HBT HBP HBN Fig.1 Circuit diagrams VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1200 1000 800 Conditions MP03XXX360-12 MP03XXX360-10 MP03XXX360-08 Tvj = 0˚ to 130˚C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively 1 2 3 K2 G2 G1 K1 Lower voltage grades available. ORDERING INFORMATION Order As: MP03HBT360-12 or MP03HBT360-10 or MP03HBT360-08 MP03HBN360-12 or MP03HBN360-10 or MP03HBN360-08 MP03HBP360-12 or MP03HBP360-10 or MP03HBP360-08 Note: When ordering, please use the complete part number. Outline type code: MP03 Fig. 2 Electrical connections - (not to scale) 1/8 www.dynexsemi.com MP03XXX360 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) Parameter Mean on-state current Test Conditions Half wave resistive load Tcase = 75˚C Tcase = 85˚C IT(RMS ITSM I2t ITSM I2t Visol RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Tcase = 75˚C 10ms half sine, Tj = 130˚C VR = 0 10ms half sine, Tj = 130˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 352 306 553 10.6 560 x 103 8.5 360 x 103 3000 Units A A A kA A2s kA A2s V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - junction to case (per thyristor or diode) dc Half wave 3 Phase Rth(c-hs) Thermal resistance - case to heatsink (per thyristor or diode) Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M5 Electrical connections - M8 Weight (nominal) Mounting torque = 5Nm with mounting compound Reverse (blocking) –40 135 135 5(44) 9(80) 950 ˚C ˚C Nm (lb.ins) Nm (lb.ins) g Test Conditions Min. Max. 0.105 0.115 0.12 0.05 Units ˚C/kW ˚C/kW ˚C/kW ˚C/kW 2/8 www.dynexsemi.com MP03XXX360 DYNAMIC CHARACTERISTICS - THYRISTOR Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tj = 130˚C To 67% VDRM, Tj = 130˚C From 67% VDRM to 600A, gate source 10V, 5Ω tr = 0.5µs, Tj = 130˚C VT(TO) rT Threshold voltage On-state slope resistance At Tvj = 135˚C. See note 1 At Tvj = 135˚C. See note 1 0.75 0.7 V mΩ Min. Max. 50 1000 500 Units mA V/µs A/µs Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W 3/8 www.dynexsemi.com MP03XXX360 1600 20 Measured under pulse conditions Tj = 125˚C I2t = Î2 x t 2 Peak half sine wave on-state current - (kA) Instantaneous on-state current, IT - (A) 1200 15 500 450 10 400 350 I2t 5 250 200 0 1 ms 150 50 300 I2t value - (A2s x 103) 800 400 0 0.6 0.8 1.2 1.0 1.4 1.6 Instantaneous on-state voltage, VT - (V) 1.8 10 1 2 3 45 Cycles at 50Hz Duration Fig. 3 Maximum (limit) on-state characteristics 100 Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 130˚C) 0.15 Table gives pulse power PGM in Watts Pulse Width µs 20 25 100 500 1ms 10ms Frequency Hz 50 100 100 100 100 100 10 100 100 100 100 100 50 400 100 100 100 25 - Thermal impedance, Rth(j-c) - (˚C/W) 10 0W 75 W Gate trigger voltage, VGT - (V) d.c. 50 W 10 10 0.10 W 5W e Upp r lim it 9 9% Tj = –40˚C Tj = 25˚C Tj = 125˚C 1.0 0.05 L ow er li mit 1% 0.1 0.001 0.01 0.1 0.1 Gate trigger current, IGT - (A) 10 0 0.001 0.01 0.1 1.0 10 100 Time - (s) Fig. 5 Gate characteristics Fig. 6 Transient thermal impedance - dc 4/8 www.dynexsemi.com MP03XXX360 500 450 400 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ On-state power loss per device - (W) 500 180˚ 450 400 350 300 250 200 150 100 50 0 0 30˚ 60˚ 120˚ 90˚ d.c. 350 300 250 200 150 100 50 0 0 30˚ 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 350 400 50 100 150 200 250 300 350 400 Mean on-state current, IT(AV) - (A) Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 140 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 140 120 Maximum permissible case temperature - (˚C) 120 Maximum permissible case temperature - (˚C) 100 100 d.c. 80 80 60 60 40 40 20 30˚ 0 0 50 60˚ 90˚ 120˚ 180˚ 350 400 20 30˚ 60˚ 90˚ 120˚ 180˚ 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 0 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 350 400 Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 5/8 www.dynexsemi.com MP03XXX360 1400 1200 0.04 0.02 Rth(hs-a) ˚C/W R - Load 1000 Total power - (W) 0.08 800 0.10 0.12 0.15 400 0.20 0.30 200 0.40 L - Load 600 0 0 20 40 60 80 100 120 0 Maximum ambient temperature - (˚C) 200 400 D.C. output current - (A) 600 Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 1200 0.08 1000 0.04 0.02 Rth(hs-a) ˚C/W R & L- Load 800 Total power - (W) 0.10 0.12 600 0.15 0.20 0.30 200 0.40 400 0 0 20 40 60 80 100 120 0 Maximum ambient temperature - (˚C) 200 400 D.C. output current - (A) 600 Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 6/8 www.dynexsemi.com MP03XXX360 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 42.5 Ø5.5 35 28.5 5 38 G1 K1 5 6.5 50 18 1 2 3 K2 G2 K2 G2 5 1 2 Circuit type: HBN G1 K1 3 80 115 3x M8 2.8x0.8 1 2 Circuit type: HBP G1 K1 K2 G2 3 1 2 Circuit type: HBT 3 52 32 92 Recommended fixings for mounting: M5 socket head cap screws. Nominal weight: 950g Auxiliary gate/cathode leads are not supplied but may be purchsed separately. Module outline type code: MP03 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75˚C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. 7/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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