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KVF

KVF

  • 厂商:

    EDI

  • 封装:

  • 描述:

    KVF - 500 mA SILICON RECTIFIERS HIGH VOLTAGE - Electronic devices inc.

  • 数据手册
  • 价格&库存
KVF 数据手册
KVF 500 mA SILICON RECTIFIERS HIGH VOLTAGE DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 30,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. Peak Reverse Voltage PRV (Volts) Max. Fwd. Voltage Drop at 25 C and 500 mA VF (Volts) O L ength L FIG. 3 Inches MM KVF 5 KVF 7.5 KVF 10 KVF 12.5 KVF 15 KVF 20 KVF 25 KVF 30 5,000 6 9 12 15 17 22 28 34 1.00 25.40 7,500 10,000 1.63 2.00 2.50 2.50 3.20 4.50 4.50 41.40 50.80 63.50 63.50 81.28 114.30 114.30 12,500 15,000 20,000 25,000 30,000 ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified) Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and 100 C, IR Ambient Operating Temperature Range,TA o o 0.1 A 15 A -55 oC to +175 oC -55 oC to +175 oC 50 Amps 2 Amps 5 sec Storage Temperature Range, TSTG Max.One-Half Cycle Surge Current, I FM (Surge )@ 60Hz Forward Voltage Repetitive Peak, IFRM Max. Reverse Recovery Time , Trr (Fig.4) E DI reserves the right to change these specifications at any time without notice. KVF FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 600 FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS AVG. RECTIFIED D.C. CURRENT MILLAMPERES 500 PEAK SURGE CURRENT 50 40 400 300 30 200 25 C 20 10 0 1 10 100 O 100 0 25 50 75 100 125 O 150 175 AMBIENT TEMP C CYCLES AT 60 Hz FIG.3 PACKAGE STYLE A E LTR A B INCHES .051 DIA. + .03 _ 2.0 MIN. 0.31 MAX. 0.51 MAX. MILLIMETERS 1.30 DIA. + .76 _ 50.8 MIN. 7.9 MAX. 12.96 MAX. _ L+ B C D C D E It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to prevent damage form excess heat. FIG.4 TEST CIRCUIT TYPICAL REVERSE RECOVERY WAVEFORM T RR R1 50 OHM D.U.T. PULSE GENERATOR R2 1 OHM SCOPE + ZERO 0.5A REFERENCE 1.0A 0.25A R1, R2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV. IKC REP.RA TE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR Prior to the manufacture of these assemblies, the individual silicon junction is measured for maximum recovery time in the test circuit shown. EDI reserves the right to change these specifications at any time without notice. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 E e-mail:sales@edidiodes.com * website: http://www.edidiodes.com W

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