RC80

RC F AST RECOVERY 200 NANOSECOND SILICON RECTIFIER SMALL SIZE LOW LEAKAGE HIGH TEMPERATURE STABILITY HIGH SURGE CAPABILITY EDI Type RC05 RC10 RC20 RC40 RC60 RC80 RC100 PRV Volts 50 100 200 400 600 800 1000 o Maximum Reverse RECOVERY TIME IN NANOSECONDS (Fig.4) 200 200 200 200 200 200 200 ELECTRICAL CHARACTERISTICS(at T A =25 C Unless Otherwise Specified) 1 Amp 50 Amp 1.4V olts 1A 50 o Average Rectif ied Forward Current @ 50 C, IO Max. Peak Surge Current , IFSM (8.3 ms) Max. Forward Voltage Drop @ 1 Amp, VF Max. DC Reverse Current @ P RV and 25 C, IR Max. DC Reverse Current @ PRV and100 C, IR Trr (Reverse Recovery time), Fig. 4 o o A 200 nanosec Max 125nanosec Typical Ambient Operating Temperature Range, T A Storage Temperature Range, T STG -55 oC to +150 oC -55 oC to +175 oC NOTE: Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C RC FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT 0.1SEC 1.0SEC 100 100 % RATED FWD CURRENT 50 % MAXIMUM SURGE 75 75 50 25 25 0 0 25 50 75 100 O 0 125 150 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 AMBIENT TEMPERATURE ( C) CYCLES(60 Hz) FIG.3 .030 DIA. .033 1.0 MIN. .380 MAX. 1.0 MIN. .160 MAX. TEST CIRCUIT FIG.4 TYPICAL REVERSE RECOVERY WAVEFORM T RR R1 50 OHM D.U.T. PULSE GENERATOR R2 1 OHM SCOPE + ZERO 0.5A REFERENCE - 1.0A 0.25A R1, R2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV . I KC REP.RA TE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR EDI reserves the right to change these specifications at any time whthout notice. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 E e-mail:sales@edidiodes.com * W website:http:// www.edidiodes.com