RVF12.5

RVF FAST RECOVERY - HIGH VOLTAGE HIGH CURRENT SILICON RECTIFIERS MATCHED SILICON RECTIFIER ELEMENTS DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 40,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. Peak Reverse Voltage PRV (V olts) 5,000 8,000 10,000 12,500 15,000 20,000 25,000 30,000 40,000 Average Rectified Current @55 o C@100 o C Amps 0.50 0.50 0.50 0.50 0.50 0.40 0.40 0.40 0.40 0.33 0.33 0.33 0.33 0.33 0.27 0.27 0.27 0.27 Max. Fwd Voltage @25 oC I F =0.5 ADC (Volts) 9 12 15 20 23 30 38 45 60 Length L Fig.3 Inches MM 1.25 1.75 2.00 2.50 3.00 4.00 4.50 5.50 7.00 31.75 44.45 50.80 63.50 76.20 101.60 114.30 139.70 177.80 RVF5 RVF8 RVF10 RVF12.5 RVF15 RVF20 RVF25 RVF30 RVF40 ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified) Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and 100 C, IR Ambient Operating Temperature Range,TA o o 0.1 A 15 A -55 oC to +150 oC -55 oC to +150 oC 50 Amps 2 Amps 150 nanoseconds Storage Temperature Range, TSTG Max.One-Half Cycle Surge Current, I FM (Surge )@ 60Hz Forward Voltage Repetitive Peak,I FRM Max. Reverse Recovery Time , Trr (Fig.4) EDI reserves the right to change these specifications at any time without notice. RVF FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 600 FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS 0.1SEC 100 1.0SEC AVG. RECTIFIED D.C. CURRENT MILLAMPERES 500 400 300 % MAXIMUM SURGE RVF 5-15 75 50 200 RVF 20-40 25 100 0 25 50 75 100 125 O 0 150 175 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 AMBIENT TEMP( C ) CYCLES(60 Hz) FIG.3 PACKAGE STYLE A E LTR A B INCHES .051 DIA. + .03 _ 2.0 MIN. 0.31 MAX. 0.76 MAX. MILLIMETERS 1.30 DIA. + .76 _ 50.8 MIN. 7.9 MAX. 19.30 MAX. _ L+ B C D C D E It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to prevent damage form excess heat. FIG.4 TEST CIRCUIT TYPICAL REVERSE RECOVERY WAVEFORM + T RR R1 50 OHM D.U.T. PULSE GENERATOR R2 1 OHM SCOPE ZERO 0.5A REFERENCE 1.0A 0.25A R1, R2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV. IKC REP.RA TE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR Prior to the manufacture of these assemblies, the individual silicon junction is measured for maximum recovery time in the test circuit shown. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 E e-mail:sales@edidiodes.com * W website: http://www.edidiodes.com