RVT1200

VT RVT HIGH VOLTAGE 50 mA SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS FAST RECOVERY (R_SERIES) AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type VT1000 VT1200 VT1500 RVT1000 RVT1200 RVT1500 PRV Volts 10,000 12,000 15,000 10,000 12,000 15,000 REVERSE RECOVERY TIME (Fig.4) 100 ns max. 100 ns max. 100 ns max. ELECTRICAL CHARACTERISTICS (at TA =25 o C Unless Otherwise Specified) Average Rectified Forward Current @ 50 C, IO Max. Peak Surge Current, IFSM ( 8.3 ms) Max. Forward Voltage Drop @ 50 mA, V F Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and100 C, I R Ambient Operating Temperature Range, T A Storage Temperature Range, T STG o o o 50 mA 5 Amp 28Volts 1 25 A A -55 to + 125oC -55 to + 150oC NOTES: 1.It is recommended that a proper heat sink be used on the terminals of this device between the body and soldering point to prevent damage from excess heat. 2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated. EDI reserves the right to change these specifications at any time without notice. VT RVT FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 100 100 FIG.2 NON- REPETITIVE SURGE CURRENT 0.1SEC 1.0SEC % RATED FWD CURRENT % MAXIMUM SURGE 75 75 50 50 25 25 0 0 25 50 75 100 O 0 125 150 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 AMBIENT TEMPERATURE ( C) CYCLES(60 Hz) FIG.3 A LEAD DIA. INCHES A D C MIN. MM 0.5 15.2 12.7 4.0 MECHANICAL Leads-solid silver B 0.02 0.60 0.50 0.16 B C D Markings-Cathode band and device type FIG.4 REVERSE RECOVERY TEST METHOD R ECOVERY WAVE FORM Trr RECOVERY WA VE FORM 1000 NI 0.1 D.U.T. + I F=2MA I RR=1MA I R=5MA - PULSE GENERATOR 50 NI SCOPE WAVE FORMS CIRCUIT ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 E e-mail:sales@edidiodes.com * W website: http://www.edidiodes.com