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10A05

10A05

  • 厂商:

    EIC

  • 封装:

  • 描述:

    10A05 - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
10A05 数据手册
10A01-10A07 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * Diffused Junction * High current capability and Low Forward Voltage Drop * Surge Overload Rating to 600A Peak * Low Reverse Leakage Current * Pb / RoHS Free SILICON RECTIFIER DIODES D6 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) MECHANICAL DATA : * Case : molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * W eight : 2.049 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Average Rectified Output Current (Note 1) Ta = 50°C Non-Repetitive Peak Forward Surge Current 8.3 ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 10 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Thermal Resistance Operating and Storage Temperature Range Notes : SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT VRRM VRMS VDC IO IFSM VF IR IR(H) Cj RθJC TJ, TSTG 150 0.8 - 65 to + 150 50 35 50 100 70 100 200 140 200 400 280 400 10 600 1.3 10 100 80 600 420 600 800 560 800 1000 700 1000 V V V A A V µA µA pF °C/W °C Ta = 25 °C Ta = 100 °C Typical Junction Capacitance (Note 2) (1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case. (2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC. Page 1 of 2 Rev. 01 : October 27, 2005 RATING AND CHARACTERISTIC CURVES ( 10A01 - 10A07 ) FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORW ARD OUTPUT CURRENT (A) 10 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1000 PEAK FORW ARD SURGE CURRENT (A) 8.0 800 8.3 ms Single Half Sine-Wave JEDC Method 6.0 600 4.0 400 2.0 200 0 0 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCCE (pF) INSTANTANEOUS FORW ARD CURRENT (A) TJ = 25 °C f = 1MHz 10 10 10A01-10A04 1.0 Pulse Width = 300 µs 2% Duty Cycle TJ = 25 °C 10A05-10A07 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 0 10 100 INSTANTANEOUS FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Page 2 of 2 Rev. 01 : October 27, 2005
10A05 价格&库存

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UBQ10A05L04HI
  •  国内价格
  • 10+0.2665
  • 50+0.2461
  • 200+0.2291
  • 600+0.2121
  • 1500+0.1985
  • 3000+0.19

库存:2650

10A10
  •  国内价格
  • 20+0.50912
  • 100+0.46472
  • 500+0.43512
  • 1000+0.40552
  • 5000+0.37
  • 10000+0.3552

库存:1000

10A10
  •  国内价格
  • 5+0.46742
  • 20+0.42388
  • 100+0.38033
  • 500+0.33678
  • 1000+0.31646
  • 2000+0.30194

库存:1109