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1A2

1A2

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1A2 - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1A2 数据手册
1A1 ~ 1A7 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES R-1 0.099 (2.51) 0.095 (2.42) 1.00 (25.4) MIN. 0.138 (3.5) 0.114 (2.9) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram 0.024 (0.6) 0.020 (0.5) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (1) Typical Thermal Resistance (2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC SYMBOL 1A1 50 35 50 1A2 100 70 100 1A3 200 140 200 1A4 400 280 400 1.0 30 1.1 5.0 50 15 50 1A5 600 420 600 1A6 800 560 800 1A7 1000 700 1000 UNIT VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ RθJA TJ TSTG V V V A A V μA μA pF °C/W °C °C Ta = 25 °C Ta = 100 °C - 65 to + 125 - 65 to + 150 (2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length Page 1 of 2 Rev. 03 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1A1 - 1A7 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 24 0.8 0.6 18 0.4 12 0.2 6 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 10 TJ = 100 °C 1.0 1.0 0.1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 03 : March 25, 2005
1A2
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种外设和接口,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚、复位引脚等,具体分配需参考芯片手册。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,支持多种通信接口,如USART、SPI、I2C等。

5. 功能详解:具备丰富的外设功能,如ADC、DAC、定时器、PWM等,支持多种工作模式,如睡眠模式、待机模式等。

6. 应用信息:适用于需要高性能处理能力的嵌入式系统,如电机控制、工业自动化、医疗设备等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm,适用于PCB布局和焊接。

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