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1F6

1F6

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1F6 - FAST RECOVERY DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1F6 数据手册
1 F1 ~ 1 F7 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY DIODES R-1 0.099 (2.51) 0.95 (2.42) 1.00 (25.4) MIN. 0.138 (3.5) 0.114 (2.9) * Pb / RoHS Free 0.024 (0.6) 0.020 (0.5) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL 1F1 50 35 50 1F2 100 70 100 1F3 200 140 200 1F4 400 280 400 1.0 1F5 600 420 600 1F6 800 560 800 1F7 1000 700 1000 UNIT V RRM V RMS V DC IF(AV) V V V A IFSM VF IR IR(H) Trr 30 1.3 5.0 100 150 15 - 65 to + 125 - 65 to + 150 250 500 A V µA µA ns pF °C °C Maximum Reverse Recovery Time (1) CJ TJ T STG (1) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 03 : July 8, 2005 RATING AND CHARACTERISTIC CURVES ( 1F1 - 1F7 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 Trr + 50 Vdc (approx) D.U.T. PULSE GENERATOR ( NOTE 2 ) 1Ω OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 - 1.0 A SET TIME BASE FOR 50-100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORW ARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORW ARD SURGE CURRENT, AMPERES Ta = 25 °C 24 0.8 0.6 18 0.4 12 0.2 6 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORW ARD CURRENT, AMPERES FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 10 TJ = 100 °C 1.0 1.0 0.1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1 .2 1 .4 1 .6 1 .8 2 .0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 03 : July 8, 2005

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免费人工找货
STM32G031F6P6
  •  国内价格
  • 1+3.95657
  • 30+3.80783
  • 100+3.51034
  • 500+3.21285
  • 1000+3.06411

库存:5