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1H4G

1H4G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1H4G - HIGH EFFICIENCY RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1H4G 数据手册
TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 1H1G ~ 1H8G PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * * * Glass passivated chip High current capability High reliability High speed switching Low leakage Low forward voltage Low power loss, high efficiency Pb / RoHS Free HIGH EFFICIENCY RECTIFIERS M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise noted. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Ta = 25 °C Peak Forward Surge Current , 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 1.0 A. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Maximum Full Load Reverse Current Average, Full Cycle 0.375” (9.5mm) lead length at T L = 55 °C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR IR Trr CJ TJ, TSTG 1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G UNITS 50 35 50 100 70 100 200 140 200 300 210 300 1.0 25 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V A A 1.0 1.3 5.0 100 50 15 - 65 to + 150 1.7 V μA μA 75 12 ns pF °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts Page 1 of 2 Rev. 01 : April 28, 2009 TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1H1G - 1H8G ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0 .5 A Trr + 25 Vdc (approx) D.U.T. PULSE GENERATOR ( NOTE 2 ) 1Ω OSCILLOSCOPE ( NOTE 1 0 - 0.25 A - 1.0 A SET TIME BASE FOR 10/20 ns/cm Notes : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm AVERAGE FORWARD CURRENT, (A) FIG.2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 FIG.3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 25 PEAK FORWARD SURGE CURRENT, (A) 8.3ms Single Half Sine-Wave (JEDEC Method) 20 15 0.8 0.6 0.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 25 50 75 100 125 150 175 10 0.2 5 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (μA) 10 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 50,100, 200 V 1 300, 400 V TJ = 150 °C 10 TJ = 100 °C 1 0.1 600, 800, 1000 V 0.01 TJ = 25°C Pulse Width = 300μs 1% Duty Cycle 0.1 TJ = 25°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : April 28, 2009

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