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1N3657

1N3657

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N3657 - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1N3657 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM 1N3611 - 1N3614 1N3657 PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 100 μA Maximum Average Forward Current at Ta = 100 °C at Ta = 150 °C Peak Forward Surge Current (8.3 ms half-sine) Maximum Forward Voltage at I F = 1.0 A Maximum Reverse Current at VRWM , Ta = 25 °C at VRWM , Ta = 150 °C Thermal Resistance , Junction to Lead (Note 1) Operating Junction and Storage Temperature Range Note : (1) At 3/8"(10 mm) lead length form body. SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3657 VRWM VBR(MIN) IF(AV) IFSM VF IR IR(H) RӨJL TJ, TSTG 200 240 400 480 600 720 1.0 0.3 30 1.1 1.0 300 38 -65 to +175 800 920 1000 1150 UNIT V V A A V μA °C/W °C Page 1 of 1 Rev. 03 : November 2, 2006
1N3657 价格&库存

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