0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N4004G

1N4004G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N4004G - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4004G 数据手册
1N4001G - 1N4007G BY133G PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ RθJA TJ TSTG 1N 1N 1N 1N 1N 1N 1N 4001G 4002G 4003G 4004G 4005G 4006G 4007G 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 1.0 30 1.0 5.0 50 8 45 - 65 to + 175 - 65 to + 175 420 600 560 800 700 1000 BY 133G 1300 910 1300 UNIT V V V A A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4001G - BY133G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 24 0.8 0.6 18 0.4 12 0.2 6 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 10 Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 25, 2005
1N4004G
1. 物料型号: - 1N4001G - 1N4007G 和 BY133G。

2. 器件简介: - 这些是玻璃钝化结硅整流器,具有高电流能力、高可靠性、低反向电流、低正向电压降,并且无铅/无RoHS。

3. 引脚分配: - 文档中提到极性由色带表示阴极端,轴向引线可焊,符合MIL-STD-202方法208保证。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50 - 1300伏不等。 - 最大RMS电压(VRMS):35 - 910伏不等。 - 最大直流阻断电压(VDc):50 - 1300伏不等。 - 最大平均正向电流(IF(AV)):在0.375"(9.5mm)引脚长度、75°C环境温度下为1.0安培。 - 正向压降(VF):在1.0安培正向电流下,25°C环境温度时为1.0伏。

5. 功能详解: - 这些器件适用于单相、半波、60赫兹、电阻性或感性负载。对于电容器负载,电流需降低20%。器件具有玻璃钝化芯片、高电流能力、高可靠性、低反向电流、低正向电压降等特点。

6. 应用信息: - 适用于需要整流的电路,例如电源整流、电机控制等。

7. 封装信息: - 封装为DO-41模塑塑料,环氧树脂:UL94V-0级阻燃,引线:轴向引线可焊。
1N4004G 价格&库存

很抱歉,暂时无法提供与“1N4004G”相匹配的价格&库存,您可以联系我们找货

免费人工找货