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1N4245

1N4245

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N4245 - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1N4245 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM 1N4245 - 1N4249 PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 100 μA Maximum Average Forward Current at Ta = 55 °C Peak Forward Surge Current 8.3 ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 3.0 A Maximum Reverse Current at VRWM , Ta = 25 °C at VRWM , Ta = 150 °C Maximum Reverse Recovery Time ( Note 1 ) Thermal Resistance , Junction to Lead (Note 2) Operating Junction and Storage Temperature Range SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249 VRWM VBR(MIN) IF(AV) IFSM 200 240 400 480 600 720 1.0 800 960 1000 1150 UNIT V V A 25 A VF IR IR(H) Trr RӨJL TJ, TSTG 1.3 1.0 150 5.0 42 -65 to +175 V μA μs °C/W °C Notes : (1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A. (2) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 03 : November 2, 2006
1N4245 价格&库存

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