1N4531

TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 1N4531 ~ 1N4532 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free HIGH SPEED SWITCHING DIODES DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.017 (0.43)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified .) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Repetitive Peak Forward Current Maximum Power Dissipation (1) Symbol VRRM VRM IF IFRM PD IFSM TJ TS Value 75 75 200 450 500 0.5 200 -65 to + 200 Unit V V mA mA mW A °C °C Maximum Surge Forward Current at t < 1s, Tj = 25 °C Maximum Junction Temperature Storage Temperature Range Electrical Characteristics Parameter (Tj = 25°C unless otherwise noted) Symbol 1N4531 IR 1N4532 Test Condition VR = 20 V VR = 20 V , Tj = 150 °C VR = 50 V VR = 50 V , Tj = 150 °C IF = 10 mA f = 1MHz ; VR = 0 IF = 10 mA to I R = 60mA RL = 100 Ω ; Measured at I R = 1 mA Min - Typ - Max 25 5 100 100 1 4.0 2.0 4 2 Unit nA μA nA μA V pF Reverse Current Forward Voltage Diode Capacitance VF 1N4531 1N4532 1N4531 1N4532 Cd Reverse Recovery Time Trr ns ns Page 1 of 2 Rev. 03 : December 3, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE. 200 CONTINUOUS FORWARD CURRENT, IF (mA) 1000 FIG. 2 TYPICAL FORWARD VOLTAGE Forward Current , IF (mA) 100 10 100 1 TJ = 25°C 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VS JUNCTION TEMPERATURE 1.2 103 1.0 Diode Capacitance , Cd (pF) Reverse Current , IR (nA) 0.9 0.8 102 VR = 50V 10 0.7 0.6 f = 1MHz; TJ = 25°C 1 0.5 0.1 0 10 20 0 100 200 0.4 Reverse Voltage , VR (V) Junction Temperature , Ta (°C) Page 2 of 2 Rev. 03 : December 3, 2008