1N5396G

1N5396G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N5396G - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5396G 数据手册
1N5391G - 1N5399G PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL 1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N5397G 1N5398G 1N5399G UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 500 350 500 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 50 1.1 5.0 50 15 30 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N5391G - 1N5399G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 40 1.2 0.9 30 0.6 20 0.3 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 FORWARD CURRENT, AMPERES Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 0.1 T J = 25 °C Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 25, 2005
1N5396G
1. 物料型号:1N5391G - 1N5399G

2. 器件简介: - 这是一系列玻璃钝化结的硅整流器,封装为DO-41。 - 特点是高电流能力、高可靠性、低反向电流、低正向电压降,且无铅/符合RoHS标准。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202, Method 208标准。 - 极性由色带表示阴极端。

4. 参数特性: - 工作电压范围:50 - 1000伏特。 - 最大重复峰值反向电压(VRRM):50V至1000V不等,依据型号。 - 最大正向平均电流(IF(AV)):1.5安培。 - 最大正向浪涌电流(IFSM):50安培。 - 最大正向电压(VF)在1.5安培时为1.1伏特。 - 最大直流反向电流(IR):5.0微安培(25°C时)。

5. 功能详解: - 这些器件可以在多种电压和电流条件下工作,具体参数如上所述。 - 它们具有玻璃钝化芯片,能在高温下工作(结温范围-65至+175摄氏度)。

6. 应用信息: - 由于其高可靠性和电气特性,这些器件适用于多种整流应用。

7. 封装信息: - 封装类型为DO-41模塑塑料。 - 环氧树脂:UL94V-0级阻燃。 - 安装位置:任意。 - 重量:0.34克。
1N5396G 价格&库存

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