1N5400 - 1N5408
SILICON RECTIFIER DIODES
DO - 201AD
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass passivated chip
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
1.00 (25.4)
MIN.
0.208 (5.30)
0.188 (4.80)
0.374 (9.50)
0.283 (7.20)
1.00 (25.4)
MIN.
0.052 (1.33)
0.048 (1.23)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N
5400
1N
5401
1N
5402
1N
5403
1N
5404
1N
5405
1N
5406
1N
5407
1N
5408
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
350
420
560
700
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps.
VDC
50
100
200
300
400
500
600
800
1000
V
RATING
Maximum DC Reverse Current
Ta = 25 C
at rated DC Blocking Voltage
Ta = 100 C
IF
3.0
A
IFSM
150
A
VF
1.0
V
IR
5.0
mA
IR(H)
50
mA
Typical Junction Capacitance (Note1)
CJ
28
pF
Typical Thermal Resistance (Note2)
RqJA
15
C/W
Junction Temperature Range
TJ
- 65 to + 175
C
Storage Temperature Range
TSTG
- 65 to + 175
C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 05: December 13, 2019
RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
3.0
250
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.4
1.8
1.2
0.6
0
200
150
100
50
8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
0
0
25
50
75
100
125
150
175
1
2
AMBIENT TEMPERATURE, ( C)
100
FORWARD CURRENT, AMPERES
6
10
20
40
60
100
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE
(pF)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
Pulse Width = 300 ms
2% Duty Cycle
1.0
4
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
100
50
TJ = 25 °C
10
5
1
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
0.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
1.8
2.0
Ta = 100 °C
REVERSE CURRENT,
MICROAMPERES
0.01
1.0
0.1
Ta = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 05: December 13, 2019
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