1N5416

1N5416

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N5416 - FAST RECOVERY RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5416 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM 1N5415 - 1N5420 PRV : 50 - 600 Volts Io : 3.0 Amperes FEATURES : * * * * * * * Glass Passivated Junction Chip High surge current capability High reliability Low reverse current Low forward voltage drop Fast recovery time Pb / RoHS Free FAST RECOVERY RECTIFIERS D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 50µA Maximum Average Forward Current at Ta = 55 °C Maximum Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load Maximun Forward Voltage at IF = 3.0 A at IF = 9.0 A Maximum Reverse Current at VRWM Ta = 25 °C Ta = 100 °C Maximum Reverse Recovery Time (1) Thermal Resistance, Junction to Lead Junction Temperature Range Storage Temperature Range (2) SYMBOL 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 UNIT VRWM VBR(Min) IF(AV) IFSM VF IR IR(H) Trr RӨJL TJ TSTG 150 20 - 65 to + 175 - 65 to + 175 50 55 100 110 200 220 3.0 80 1.10 1.50 1.0 20 250 400 400 440 500 550 600 660 V V A A V μA ns °C/W °C °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5A, IRM = 1A, IR(REC) = 0.25 A . (2) At 3/8 inch (10 mm) lead length from body. Page 1 of 2 Rev. 00 : September 17, 2007 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1N5415 - 1N5420 ) FIG. 1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 80 AVERAGE RECTIFIED CURRENT, (A) 4 PEAK FORWARD SURGE CURRENT , (A) 100 125 150 175 3 60 2 40 1 Resistive or inductive load l = 3/8" 0 25 50 75 20 0 0 1 10 100 AMBIENT TEMPERATURE, (°C) NUMBER OF CYCLES AT 60 Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 100 FORWARD CURRENT, (A) 1 REVERSE CURRENT, (μA) TJ = 100 °C 10 0.1 1 TJ = 25 °C 0.1 0.01 TJ = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : September 17, 2007
1N5416
1. 物料型号: - 型号包括1N5415至1N5420。

2. 器件简介: - 这些器件是快速恢复整流器,具有玻璃钝化结芯片、高浪涌电流能力、高可靠性、低反向电流、低正向电压降、快速恢复时间和无铅/无RoHS特性。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202标准方法208保证,极性由色带表示阴极端,安装位置任意。

4. 参数特性: - 最大工作峰值反向电压(VRWM)从50V至600V不等。 - 最小击穿电压(VBR(Min))从55V至660V不等。 - 最大平均正向电流(F(AV))在55°C时为3.0A。 - 最大正向浪涌电流为80A(8.3ms单次,半正弦波,叠加在额定负载上)。 - 最大正向电压(VF)在正向电流为9.0A时为1.10V至1.50V不等。 - 最大反向电流(IR)在25°C和100°C时为1.0uA。 - 最大反向恢复时间(Trr)从150ns至400ns不等。 - 热阻(RθJL)从20°C/W不等。 - 结温范围(TJ)为-65至+175°C。 - 存储温度范围(TSTG)为-65至+175°C。

5. 功能详解: - 器件为快速恢复整流器,适用于需要快速恢复时间和低正向电压降的应用。

6. 应用信息: - 适用于需要高浪涌电流能力和高可靠性的整流应用。

7. 封装信息: - 封装为D2A模塑塑料,环氧树脂为UL94V-0级阻燃,重量为0.645克。
1N5416 价格&库存

很抱歉,暂时无法提供与“1N5416”相匹配的价格&库存,您可以联系我们找货

免费人工找货