1N5620

Certificate TH97/10561QM Certificate TW00/17276EM 1N5614 - 1N5622 PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.161 (4.1) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 50 μA Maximum Average Forward Current at Ta = 55 °C at Ta = 100 °C Peak Forward Surge Current (Ta = 100 °C,f = 60 Hz, I F(AV) = 750 mA for ten 8.3 ms surges @ 1 minute intervals) Minimum Forward Voltage at I F = 3.0 A Maximum Forward Voltage at I F = 3.0A Maximum Reverse Current at VRWM , Ta = 25 °C at VRWM , Ta = 100 °C Maximum Reverse Recovery Time ( Note 1 ) Thermal Resistance , Junction to Lead (Note 2) Operating Junction and Storage Temperature Range SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 VRWM VBR(MIN) IF(AV) 200 220 400 440 600 660 1.0 0.75 30 0.8 1.3 0.5 25 2.0 38 -65 to +175 800 880 1000 1100 UNIT V V A IFSM VF(MIN) VF(MAX) IR IR(H) Trr RӨJL TJ, TSTG A V V μA μs °C/W °C Notes : (1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A. (2) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 02 : July 24, 2006