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1N5811US

1N5811US

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1N5811US - ULTRAFAST RECOVERY RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1N5811US 数据手册
Certificate : TH97/10561QM Certificate : TW00/17276EM 1N5807US - 1N5811US PRV : 50 - 150 Volts Io : 6.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ultrafast recovery time Pb / RoHS Free ULTRAFAST RECOVERY RECTIFIER DIODES SMB (DO-214AA) 1.1 ± 0.3 5.4 ± 0.15 4.8 ± 0.15 2.0 ± 0.1 3.6 ± 0.15 2.3 ± 0.2 0.22 ± 0.07 MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 100µA Maximum Average Forward Current Maximum Forward Surge Current (3) Maximum Peak Forward Voltage at I F = 4.0 A. Maximum Reverse Current at VRWM Maximum Reverse Recovery Time (4) Thermal Resistance, Junction to Lead Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRWM VBR(Min) IF(AV) IFSM VF IR IR(H) Trr RӨJL TJ TSTG 1N5807US 50 60 1N5809US 1N5811US 100 110 6.0 (1) UNIT V V A A V μA ns °C/W °C °C 150 160 3.0 (2) 125 0.875 5.0 150 30 22 - 65 to + 175 - 65 to + 175 Notes : (1) Rated at TL=75 °C at 3/8 inc lead length. Derate at 60 mA/ °C for TL above 75 °C. (2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(max) dose not exceed 175 °C. (3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals. (4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/ μs min. Page 1 of 2 Rev. 00 : April 4, 2007 Certificate : TH97/10561QM Certificate : TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1N5807US - 1N5811US ) FIG. 1 - OUTPUT CURRENT VS. LEAD TEMPERATURE FIG.2 - MULTIPLE SURGE CURRENT VS. DURATION AVERAGE RECTIFIED CURRENT, (A) 8 PERCENT OF SURGE RATING, (%) 10 100 L = 3/8" 80 6 60 4 40 2 L = Lead length from body 0 25 50 75 100 125 150 175 20 0 1 10 100 LEAD TEMPERATURE, (°C) CYCLES AT 60 HZ SINE WAVE FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 1000 Ta = 100 °C FORWARD CURRENT, (A) 10 REVERSE CURRENT, (μA) 100 1.0 Ta = 25 °C 10 0.1 1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : April 4, 2007
1N5811US 价格&库存

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