0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N914T/R

1N914T/R

  • 厂商:

    EIC

  • 封装:

    DO-204AH, DO-35, Axial

  • 描述:

    DIODE GEN PURP 75V 75MA DO35

  • 数据手册
  • 价格&库存
1N914T/R 数据手册
1N914/A/B HIGH SPEED SWITCHING DIODES DO - 35 Glass (DO-204AH) FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Repetitive peak forward current: max. 225 mA • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current 1N914 1N914 A/B Forward Continuous Current 1N914 1N914 A/B Non-repetitive Peak Forward Surge Current 75 IF(AV) 150 IFM at t = 1μs 1 IFSM Operating and Storage Temperature Range A 1 1N914 A/B at t = 1μs Power Dissipation mA 300 at t = 1s 1N914 mA 200 4 Ptot 500 mW TJ, Tstg -65 to + 175 C Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Symbol IR Reverse Current Forward Voltage 1N914 1N914A 1N914B 1N914B VF Diode Capacitance Cd Reverse Recovery Time Trr Page 1 of 2 Test Condition Min Typ Max Unit VR = 20 V VR = 75 V VR = 20 V , Tj = 150 C IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA f = 1MHz ; VR = 0 0.62 - - 25 5 50 1.0 1.0 0.72 1.0 4.0 nA mA mA V V V V pF IF = 10 mA to IR = 1 mA VR = 1 mA, RL = 100 Ω - - 4 ns Rev. 04 : March 27, 2018 RATING AND CHARACTERISTIC CURVES ( 1N914/A/B ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE. FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Lead Length 10mm. Forward Current , IF (mA) CONTINUOUS FORWARD CURRENT, IF (mA) 200 150 100 50 100 10 1 0.1 0 0.01 0 100 200 0 Ambient Temperature , Ta (ฐC) 0.8 1.2 1.4 FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 103 VR = 75V Reverse Current , IR (mA) 1.0 Diode Capacitance , Cd (pF) 0.4 Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE 0.9 0.8 0.7 102 10 1 f = 1MHz; TJ = 25°C 0.6 10-1 0.5 10-2 0.4 0 10 Reverse Voltage , VR (V) Page 2 of 2 TJ = 25°C 20 0 100 200 Junction Temperature , Ta (°C) Rev. 04 : March 27, 2018
1N914T/R 价格&库存

很抱歉,暂时无法提供与“1N914T/R”相匹配的价格&库存,您可以联系我们找货

免费人工找货