1S50

1S50

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1S50 - SCHOTTKY BARRIER RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1S50 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere FEATURES : * * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low leakge Pb / RoHS Free SCHOTTKY BARRIER RECTIFIER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375" (9.5mm) Lead Length Maximum Peak Forward Surge Current, 8.3ms single half sine wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 1.0 A Maximum Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Typical Jucntion Capacitace (Note 2) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL 1S20 VRRM VRMS VDC IF(AV) 20 14 20 1S30 30 21 30 1S40 40 28 40 1.0 1S50 50 35 50 1S60 60 42 60 UNIT V V V A IFSM VF IR IR(H) RӨJA CJ TJ TSTG - 65 to + 125 0.55 35 0.70 1.0 10 50 110 - 65 to + 150 - 65 to + 150 A V mA mA °C/W pF °C °C Notes : (1) Thermal resistance from junction to ambient, Vertical PC board mounting, 0.5" (12.7mm) Lead Length. (2) Measured at 1 MHz and applied revers voltage of 4.0 volts. Page 1 of 2 Rev. 00 : June 1, 2007 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1S20 - 1S60 ) FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) 50 AVERAGE FORWARD CURRENT, (A) 1.0 0.8 1S50 - 1S60 0.6 1S20 - 1S40 0.4 40 30 20 0.2 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 LEAD TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, (A) 1S20 - 1S40 10 INSTANTANEOUS REVERSE CURRENT, (mA) 10 1.0 1S50 - 1S60 TJ = 25 °C Pulse Width = 300 μs 1% Duty Cycle 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 1.0 TJ = 125 °C 0.1 0.1 INSTANTANEOUS FORWARD VOLTAGE, (V) TJ = 25 °C 0.01 1S20 - 1S40 1S50 - 1S60 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : June 1, 2007
1S50
1. 物料型号: - 型号为1S20至1S60,表示不同的电压等级,分别为20V、30V、40V、50V和60V。

2. 器件简介: - 这是一系列肖特基势垒整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、高效率、低功耗、低正向电压降和低漏电。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202方法208保证。

4. 参数特性: - 最大重复峰值反向电压(VRRM):20V至60V不等。 - 最大RMS电压(VRMS):14V至42V不等。 - 最大DC阻断电压(VDC):20V至60V不等。 - 最大平均正向整流电流(IF(AV)):1.0A。 - 最大峰值正向浪涌电流(IFSM):35A。 - 最大正向电压在1.0A时(VF):0.55V至0.70V不等。 - 最大反向电流在25°C时(IR):10mA。 - 额定DC阻断电压在100°C时(R(H)):10mA。 - 典型热阻(ReJA):50°C/W。 - 典型结电容(CJ):110pF。

5. 功能详解: - 这些二极管用于整流应用,能够处理高电流和高浪涌电流,同时保持低功耗和高效率。

6. 应用信息: - 适用于需要高效率和高可靠性整流的场合,如电源、电机控制和电力传输系统。

7. 封装信息: - 封装为M1A模塑塑料封装,环氧树脂为UL94V-0级阻燃材料,引脚为轴向引脚,极性由色带表示阴极端,可任意位置安装,重量约为0.20克。

很抱歉,暂时无法提供与“1S50”相匹配的价格&库存,您可以联系我们找货

免费人工找货