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1SS165

1SS165

  • 厂商:

    EIC

  • 封装:

  • 描述:

    1SS165 - SCHOTTKY BARRIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
1SS165 数据手册
1SS165 FEATURES : • Low forward voltage • High breakdown voltage • Low diode capacitance. • Pb / RoHS Free SCHOTTKY BARRIER DIODES DO - 34 Glass 0.063 (1.6 )max. 1.00 (25.4) min. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Cathode Mark 0.119 (3.04) max. 0.022 (0.55)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Storage temperature range 25 °C ambient temperature unless otherwise specified.) Symbol VR Io PD TJ Tstg Value 10 15 150 100 -55 to + 100 Unit V mA mW °C °C Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Diode Capacitance Forward Voltage Deviation Symbol IR VF Cd ∆V F Test Condition V R = 10 V VR = 2 V IF = 1 mA IF = 10 mA VR = 0V, f = 1MHz IF = 10 mA Min 365 520 - Typ - Max 10 0.2 430 600 1.0 ±5 Unit µA µA mV mV pF mV Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( 1SS165 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage 100 100 Forward Current , IF (mA) 10 1.0 Reverse Current , IR (µA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 1.0 0.1 0.1 0.01 0.01 0.001 0 0.001 0 5 10 15 20 25 30 Forward Voltage , VF (V) Reverse Voltage , VR (V) Diode capacitance VS. Reverse Voltage 1.2 Diode Capacitance , Cd (pF) 1.0 0.8 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 24, 2005
1SS165 价格&库存

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