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2KBP005

2KBP005

  • 厂商:

    EIC

  • 封装:

  • 描述:

    2KBP005 - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
2KBP005 数据手册
2KBP005 - 2KBP10 PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Pb / RoHS Free SILICON BRIDGE RECTIFIERS KBP 0.71 (18.0) 0.63 (16.0) 0.825 (20.95) 0.605 (15.36) + AC AC 0.035 (0.89) 0.028 (0.71) 0.500 (12.7) MIN. 0.16 (4.00) 0.14 (3.55) 0.276 (7.01 ) 0.236 (5.99) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.105 (2.66) 0.085 (2.16) Dimensions in inches and ( millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current Ta = 55°C Peak Forward Surge Current, Single sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) SYMBOL VRRM VRMS VDC IF(AV) IFSM 2KBP 005 50 35 50 2KBP 01 100 70 100 2KBP 02 200 140 200 2KBP 04 400 280 400 2.0 60 15 1.1 10 500 25 30 2KBP 06 600 420 600 2KBP 08 800 560 800 2KBP 10 1000 700 1000 UNIT V V V A A A2S V I2t VF IR IR(H) Maximum Instantaneous Forward Voltage drop per element at 3.14 Amp. Maximum DC Reverse Current Ta = 25 °C Ta = 125 °C µA µA pF at Rated DC Blocking Voltage per element Typical Junction Capacitance per element (Note 1) Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range Notes : CJ RθJA TJ TSTG °C/W °C °C - 50 to + 165 - 50 to + 165 1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( 2KBP005 - 2KBP10 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.0 80 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES 60 Hz, Resistive or inductive load. 1.5 70 60 Ta = 55 °C 50 40 30 20 10 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 1 2 4 6 10 20 40 60 100 1.0 0.5 P.C. Board Mounted with 0.47" X 0.47" ( 12mm X 12mm ) Cu. pads. 0 0 25 50 75 100 125 150 175 0 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER ELEMENT FORWARD CURRENT, AMPERES 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 0.1 TJ = 25 °C TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) FIG.5 - TYPICAL JUNCTION CAPACITANCE PER ELEMENT 100 CAPACITANCE , pF 40 20 10 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 TJ = 25 °C f = 1MHz Vsig = 50mVp-p REVERSE VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
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