2N7002K

N-Channel Enhancement MOSFET 2N7002K SOT-23 2.9 +0.1 0.4 -0.1 +0.1 -0.1 Features 0.4 3 Low Gate Threshold Voltage Low Input Capacitance +0.1 1.3 -0.1 +0.1 2.4 -0.1 Low On-Resistance: RDS(ON) 1 0.55 D rain Fast Switching Speed 2 Low Input/Output Leakage 0.95 +0.1 -0.1 +0.05 0.1 -0.01 +0.1 1.9 -0.1 0.97 +0.1 -0.1 ƽ ESD Protected 2KV HBM Source +0.1 -0.1 0.38 Gate Protection Diode 0-0.1 Gate 1 GATE 2 SOURCE 3 DRAIN Dimensions in millimeter Absolute Maximum Ratings Ta=25 Symbol Rating Drain-Source Voltage Parameter VDS 60 Gate-Source Voltage -Continuous VGS ±20 Drain Current -Continuous ( Note:1) 300 ID -Pulsed Power Dissipation Unit V mA 800 PD 350 mW RthJA 357 ć/W (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ć Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Drain-Source Breakdown Voltage (Note.2) VDSS ID=100­A, VGS=0V Zero Gate Voltage Drain Current (Note.2) IDSS VDS=60V, VGS=0V Gate-Body Leakage Current (Note.2) IGSS VDS=0V, VGS=±20V Gate Threshold Voltage (Note.2) VGS(th) VDS = 10V, ID = 1mA Static Drain-Source On-Resistance Forward Transfer Admittance (Note.2) (Note.2) RDS(On) | Yfs | Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Turn-On DelayTime td(on) Turn-Off DelayTime td(off) Min Typ Max 60 1 V 1.6 1 ­A ±10 uA 2.5 V VGS=10V, ID=500mA 2 VGS=10V, ID=50mA 3 VGS=10V, ID=200mA Unit 80 ¡ ms 50 VGS=0V, VDS=25V, f=1MHz 25 pF 5 VGS=4.5V, VDS=15V, ID=200mA 0.8 ID=200mA, VDS=30V, RG=10ȍ,VGEN=10V,RL=150ȍ 20 nC ns 40 Note: 2. Short duration test pulse used to minimize self-heating effect. Page 1 of 3 Rev. 02 : March 24, 2005 Typical Characteristics 1.4 1.00 V GS = 10V 8V 6V 5V 4V 3V 10V V DS = 10V Pulsed 8V 6V 1.0 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 5V 0.8 4V 0.6 0.4 T A = 125° C 0.10 T A = 75° C T A = 25° C 0.2 T A = -25° C 3V 0.01 0 0 1 2 1.5 1 5 4 3 V DS ,DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2 2.5 3 3.5 4.5 4 5 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 V GS = 10V Pulsed V DS = 10V ID = 1mA Pulsed T A = 125° C 1.5 T A = 85° C T A = 150° C 1 1 T A = -55° C 0.5 0 -50 T A = 0° C T A = 25° C -25 25 0 50 75 100 125 150 0.1 0.001 T ch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Tem perature 10 T A = -25° C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 7 V GS = 5V Pulsed T A = 125° C T A = 25° C Pulsed 6 T A = 85° C ID = 300mA T A = 150° C 5 4 1 T A = -55 ° C T A = 25° C T A = 0° C 3 T A = -25° C 2 ID = 150mA 1 0.1 0 0.01 0.001 0.1 ID , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current Page 2 of 3 1 0 2 4 6 8 10 12 14 16 18 20 V GS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage Rev. 02 : March 24, 2005 2.5 1 V GS = 10V Pulsed V GS = 0V Pulsed 2 I D = 150mA 1.5 1 0.5 ID R , R E V E R S E D R A IN C U R R E N T (A) ID = 300mA T A = 125° C T A = 150 ° C 0.1 T A = 85 ° C T A = 25 ° C T A = 0° C 0.01 T A = -25° C T A = -55° C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tch, CHANNEL TEMPERATURE ( C) ° Fig. 7 Static Drain-Source On-State Resistance vs. Channel Tem perature |Yfs|, F O R W A R D T R A N S F E R A D M IT T A N C E (S) ID R , R E V E R S E D R A IN C U R R E N T (A) 1 V GS = 10V T A= 25°C Pulsed 0.1 0.01 V GS = 0V 0.001 0 0.5 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage Page 3 of 3 1 1 1.5 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1 V GS = 10V Pulsed T A = 25° C T A = 150° C 0.1 T A = -55° C C T A = 85 ° 0.01 0.001 0.001 0.01 0.1 1 ID , DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Rev. 02 : March 24, 2005