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ABR1001

ABR1001

  • 厂商:

    EIC

  • 封装:

  • 描述:

    ABR1001 - AVALANCHE BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
ABR1001 数据手册
ABR1000 - ABR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board Pb / RoHS Free AVALANCHE BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. 0.30 (7.62) 0.25 (6.35) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 6.1 grams Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 5.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC VBO(min.) VBO(max.) IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 ABR 1000 50 35 50 100 550 ABR 1001 100 70 100 150 600 ABR 1002 200 140 200 250 700 ABR 1004 400 280 400 450 900 10 ABR 1006 600 420 600 700 1150 ABR 1008 800 560 800 900 1350 ABR 1010 1000 700 1000 1100 1550 UNIT V V V V V A A A 2S V µA µA °C/W °C °C 300 160 1.0 10 200 2.5 - 50 to + 150 - 50 to + 150 Note : 1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( ABR1000 - ABR1010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 10 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 8.0 PEAK FORWARD SURGE CURRENT, AMPERES HEAT SINK MOUNTING ON 2.6" x 1.4" x0.06" THK. (7.5x7.5x0.3 cm.) Al. Plate 240 6.0 180 4.0 120 2.0 60 8.3 ms SINGLE SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 TJ = 25 °C REVERSE CURRENT, MICROAMPERES 1.0 1.0 Pulse Width = 300 µ s 1% Duty Cycle 0.1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
ABR1001 价格&库存

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