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ABR3508

ABR3508

  • 厂商:

    EIC

  • 封装:

  • 描述:

    ABR3508 - AVALANCHE BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
ABR3508 数据手册
ABR3500 - ABR3510 PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free AVALANCHE BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70 1.130(28.70) 1.120(28.40) ) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally m ounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * W eight : 17.1 grams 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 17.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance Storage Temperature Range Ta = 25 °C Ta = 100 °C (Note 1) SYMBOL VRRM VRMS VDC VBO(min.) VBO(max.) IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 ABR 3500 50 35 50 100 550 ABR 3501 100 70 100 150 600 ABR 3502 200 140 200 250 700 ABR 3504 400 280 400 450 900 35 400 660 1.1 10 200 1.5 ABR 3506 600 420 600 700 1150 ABR 3508 800 560 800 900 1350 ABR 3510 1000 700 1000 1100 1550 UNIT V V V V V A A A2S V µA µA °C/W °C °C Operating Junction Temperature Range - 40 to + 150 - 40 to + 150 Note : 1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( ABR3500 - ABR3510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 50 400 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 40 320 TJ = 55 °C 30 240 20 160 10 80 8ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES TJ = 100 °C REVERSE CURRENT, MICROAMPERES 10 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
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