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BAS20

BAS20

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BAS20 - HIGH VOLTAGE SWITCHING DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BAS20 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM BAS19,BAS20,BAS21 PRV : 120 - 250 Volts IO : 200 mA FEATURES : * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 100V, 150V, 200V * Repetitive peak reverse voltage: max. 120V, 200V, 250V * Pb / RoHS Free HIGH VOLTAGE SWITCHING DIODES SOT-23 1.40 0.95 0.50 0.35 0.19 0.08 1 3.10 2.70 1.65 1.20 3.0 2.2 1.02 0.89 3 2 0.100 0.013 2.04 1.78 3 MECHANICAL DATA : * Case : * BAS19 * BAS20 * BAS21 SOT-23 plastic Case Marking Code: HA Marking Code: HB Marking Code: HC 1 2 bottom view Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current (Note 1) Maximum Non-repetitive Peak Forward Current (square wave; Tj = 25 °C prior to surge) Total Power Dissipation (Note 1) Thermal Resistance Junction to Tie-point Thermal Resistance Junction to Ambient Junction Temperature Range Storage Temperature Range (Ta = 25 °C unless otherwise specified) Symbol VRRM VR IF t = 1 µs t = 100 µs t = 10 ms IFSM Ptot Rth j-tp Rth j-a TJ TSTG (Tj = 25 °C unless otherwise specified. BAS19 120 100 BAS20 200 150 200 9 3 1.7 250 330 500 150 -65 to +150 BAS21 250 200 Unit V V mA A mW K/W K/W °C °C ELECTRICAL CHARACTERISTICS Parameter Forward Voltage Reverse Current Capacitance Reverse Recovery Time Test Condition IF = 100 mA IF = 200 mA VR = VRmax VR = VRmax, Tj = 150 °C VR = 0 V, f = 1 MHz IF = 30 mA to I R = 30mA, RL =100 Ω,measure at IR =3 mA Symbol VF IR CD Trr BAS19 BAS20 1.00 1.25 100 100 5 50 BAS21 Unit V nA µA pF ns Note : (1) Device mounted on an FR4 printed circuit board. Page 1 of 2 Rev. 01 : May 22, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES ( BAS19, BAS20, BAS21 ) FIG.1 - MAXIMUM CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATER 250 FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE; TYPICAL VALUES 1.0 FORWARD CURRENT, (mA) 200 0.8 CAPACITANCE, (pF) 150 0.6 100 0.4 50 0.2 f = 1MHz; Tj = 25 °C 0 0 50 0 100 150 200 0 2 4 6 8 AMBIENT TEMPERATURE, (°C) REVERSE VOLTAGE, (V) FIG.3 - FORWARD CURRENT VS. FORWARD VOLTAGE ; TYPICAL VALUES 600 FIG.4 - REVERSE CURRENT VS. JUNCTION TEMPERATURE; TYPICAL VALUES 100 FORWARD CURRENT, (mA) TJ = 150 °C TJ = 25 °C 200 REVERSE CURRENT, (µA) 2 400 10 1 0 0 1 0.1 VR =V Rmax FORWARD VOLTAGE, (V) 0.01 0 50 100 150 200 JUNCTION TEMPERATURE, (°C) Page 2 of 2 Rev. 01 : May 22, 2006
BAS20 价格&库存

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BAS20
    •  国内价格
    • 50+0.114
    • 200+0.10687
    • 600+0.09975
    • 2000+0.09262
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    库存:1640

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      •  国内价格
      • 5+0.12342
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      •  国内价格
      • 1+0.09518
      • 10+0.08786
      • 30+0.08639
      • 100+0.082

      库存:10

      SBAS20LT1G
        •  国内价格
        • 5+0.33332
        • 20+0.32721
        • 100+0.31498

        库存:11

        LBAS20HT1G
          •  国内价格
          • 1+0.0868
          • 30+0.0837
          • 100+0.0806
          • 500+0.0744
          • 1000+0.0713
          • 2000+0.06944

          库存:680