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BAT83

BAT83

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BAT83 - SCHOTTKY BARRIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BAT83 数据手册
BAT81 - BAT83 FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. • Pb / RoHS Free SCHOTTKY BARRIER DIODES DO - 34 Glass 0.063 (1.6 )max. 1.00 (25.4) min. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Cathode Mark 0.119 (3.04) max. 0.022 (0.55)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter BAT81 Continuous Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current at tp ≤1s Non-repetitive Peak Forward Surge Current at tp ≤ 10ms Power Dissipation (Infinite Heatsink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range BAT82 BAT83 25 °C ambient temperature unless otherwise specified.) Symbol VR IF IFRM IFSM PD RθJA TJ TS Value 40 50 60 30(1) 150(1) 500 200 (1) (1) Unit V mA mA mA mW °C/W °C °C 430(1) 125 -65 to + 150 Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Diode Capacitance Page 1 of 2 Symbol IR VF Cd Test Condition VR = VRmax IF = 1mA IF = 15mA VR = 1V, f = 1MHz Min - Typ - Max 200 0.41 1.0 1.6 Unit nA V pF Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BAT81 - BAT83 ) Typical forward characteristics Typical reverse characteristics 1000 Ta = 25°C 10 4 Forward Current , IF (mA) 100 10 Reverse Current , IR (nA) 103 Ta = 85°C 102 Ta = 25°C 10 1 0.1 1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0 10 20 30 40 50 60 Forward Voltage , VF (V) Reverse Voltage , VR (V) Typical diode capacitance as a function of reverse voltage 2.0 Diode Capacitance , Cd (pF) 1.5 1.0 0.5 0 0 10 20 30 40 50 60 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 24, 2005
BAT83 价格&库存

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