BAV100

BAV100 ~ BAV103 FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively HIGH SPEED SWITCHING DIODES MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. • Repetitive peak forward current: max. 625 mA. • Pb / RoHS Free MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Repetitive Peak Reverse Voltage 25 °C ambient temperature unless otherwise specified.) Symbol BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 VRRM Value 60 120 200 250 50 100 150 200 625 250 3.0 1.0 400 175 -65 to + 175 Unit V Maximum Continuous Reverse Voltage Maximum Repetitive Peak Forward Current Maximum Continuous Forward Current Maximum Surge Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range VR IFRM IF V mA mA A mW °C °C at t = 100µs , Tj = 25°C at t = 1s , Tj = 25°C IFSM PD TJ TS Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Symbol IR Test Condition V R = 50 V VR = 100 V VR = 150 V VR = 200 V IF = 100 mA IF = 200 mA f = 1MHz ; VR = 0 IF = 30 mA to IR = 30mA RL = 100 Ω ; measured at IR = 3mA Forward Voltage Diode Capacitance Reverse Recovery Time VF Cd Trr Min. - Typ. - Max. 100 100 100 100 1.0 1.25 5.0 50 Unit nA V pF ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( BAV100 ~ BAV103 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 400 1000 CONTINUOUS FORWARD CURRENT, IF (mA) 300 Forward Current , IF (mA) 100 10 TJ = 25°C 1 200 100 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.5 103 1.4 Reverse Current , IR (µA) Diode Capacitance , Cd (pF) 102 VR = VRmax. 1.3 f = 1MHz; TJ = 25°C 1.2 1.1 10 1 1.0 10-1 0.9 10-2 0 10 20 0 100 200 0.8 Reverse Voltage , VR (V) Junction Temperature, Tj (°C) Page 2 of 2 Rev. 02 : March 25, 2005